Infineon Technologies Ag

Infineon Technologies Austria Ag

Guenter Schagerl

Hans-Joachim Schulze

Peter Irsigler

Thomas Christian Neidhart

Roland Rupp

Bernhard Goller

Jan Richter

Marko Swoboda

Gerald Lackner

Ralf Rieske

Stefan Krivec

Alexander Binter

Wolfgang Diewald

Heimo Graf

Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices

One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities.

Method of manufacturing semiconductor devices which allows reproducible thinning of a semiconductor body of the semiconductor devices

The disclosure describes techniques for determining an ion concentration in a sample. According to these techniques of this disclosure, an ion concentration of a sample is determined based on detecting at least one change in an electrical characteristic of a semiconductor device due to a gate insulation layer of the semiconductor device placed in contact with the sample.

Ion sensor

Semiconductor device and method for producing a semiconductor device

Growing community of inventors

Finkenstein, Austria

Guenter Schagerl