Siltronic Ag

Guenter Sachs

Peter Storck

Sarad Bahadur Thapa

Helmut Schwenk

Frank Muemmler

Peter Dreier

Ute Rothammer

Rudolf Mayrhuber

A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant adetermined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a&#x3e;a, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from &#x2212;50 &#x3bc;m to 50 &#x3bc;m.

Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing it

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Burghausen, Germany

Guenter Sachs