Universitaet Kassel

Institut Fuer Festkoerper- Und Werkstofforschung Dresden E.v.

Universitaet Bielefeld

Guenter Reiss

Arno Ehresmann

Volker Hoeink

Jan Schmalhorst

Hubert Brueckl

Dirk Meyners

Thomas Muehl

The invention relates to a reconfigurable magnetic logic-circuit array having at least two magnetoresistive elements, each composed of at least two magnetic layers, which are separated from one another by an intermediate layer, in each instance, whereby one of the magnetic layers, as a reference layer, does not substantially change its magnetization under the influence of external magnetic fields, and the other magnetic layer, as a free layer, changes its magnetization perceptibly under the influence of external magnetic fields, and having at least one conductor for signal ports, with which conductor, when current is flowing, a first magnetic field can be generated that flips the magnetization of the free layers, and having a device for on-demand generation of a second variable magnetic field, which also influences the magnetoresistive elements. For this purpose, two such magnetoresistive elements are disposed adjacent to one another, whereby the magnetization of the two reference layers is oriented in opposite directions by means of preadjusted unidirectional anisotropy, and the magnetoresistive elements are interconnected with one another in such a manner that, as a result of the action of the first and second magnetic fields on the magnetoresistive elements, the switching behavior of all basic logic functions, especially the AND, OR, NAND, NOR, XOR or XNOR functions, can be induced on the basis of the resulting changes in the orientation of the magnetization of the free layers, and thus of the resistance of the magnetoresistive elements in the logic-circuit array.

Reconfigurable magnetic logic-circuit array and methods for producing and operating such logic devices

The invention relates to the production or treatment of semiconductor or other solid components, especially to a method for directly nano-structuring amorphous carbonlayers. According to the invention, a local, field-induced reaction is activated in the carbon with an electrically conductive or semiconducting probe. Said probe is positioned at a distance from the amorphous carbon layer or is passed over said amorphous carbon layer at a distance. The distance must be such that the electrical conduction mechanism 'field emission' or 'tunnelling' can still occur. An electrical voltage is applied to said probe in relation to the layer at the points where recesses are to be made in the layer or the layer is to be removed. This process alone produces the desired structure without any further technical steps. The inventive method can be used advantageously in the production of electronic components in the sub-&mgr;m and nm areas, and is particularly suitable in those fields for producing nano-structured etching masks whose structures have to be transferred onto layers placed beneath them. The method can also be used advantageously for entering information into amorphous carbon layers for information storage.

Method for nano-structuring amorphous carbon layers

Growing community of inventors

Bielefeld, Germany

Guenter Reiss