Infineon Technologies Ag

Infineon Technologies Austria Ag

Guenter Denifl

Markus Kahn

Thomas Grille

Daniel Maurer

Francisco Javier Santos Rodriguez

Ulrich Schmid

Gudrun Stranzl

Ursula Hedenig

Martin Zgaga

Tobias Frischmuth

Hans-Joachim Schulze

Roland Rupp

Peter Irsigler

Michael Schneider

Wolfgang Lehnert

Andre Brockmeier

Ronny Kern

Michael Knabl

Tobias Franz Wolfgang Hoechbauer

Matteo Piccin

Oliver Haeberlen

Gerhard Prechtl

Werner Schustereder

Bernhard Goller

Alexander Breymesser

Clemens Ostermaier

Joachim Hirschler

Michael Stadtmueller

Mihai Draghici

Martin Huber

Roland Moennich

Anton Gernot Winkler

Maria Reiner

Peter Lagger

Josef Schellander

Andreas Stefaner

Heimo Schieder

A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures

An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.

Semiconductor device and method of manufacturing a semiconductor device

A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.

Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafers

A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Micromechanical structure and method for manufacturing the same

A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

Micromechanical structure comprising carbon material and method for fabricating the same

In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Methods of forming semiconductor devices

A substrate carrier system for moving substrates in a vertical oven and a method for processing substrates are disclosed. In some embodiments, a method for oxidizing material or depositing material includes carrying a plurality of substrates by a substrate carrier and inserting the substrate carrier into a vertical oven, wherein the plurality of substrates are held by the substrate carrier in predefined positions, wherein an angle measured between a main surface of a substrate of the plurality of substrates at one of the predefined positions and a vertical direction is less than 20 degrees. The method further includes oxidizing a material on the plurality of substrates or depositing a material onto the plurality of substrates.

Substrate carrier system for moving substrates in a vertical oven and method for processing substrates

A method for processing a sacrificial material of an intermediate microfabricated product includes forming a hydrogen-containing carbon layer on a surface of a base structure and releasing hydrogen from the hydrogen-containing carbon layer to obtain a hydrogen-released (i.e., densified) carbon layer with low shrink. The method further includes forming a structural layer on at least a portion of a surface of the hydrogen-released carbon layer, and oxidizing the hydrogen-released (densified) carbon layer to release the structural layer. In this manner, a cavity is formed between the base structure and the structural layer. The ashing of the hydrogen-released carbon layer leaves substantially no residues within the cavity of the intermediate or final microfabricated product. Further embodiments provide a method for manufacturing a microfabricated product, to an intermediate microfabricated product, and to a microfabrication equipment.

Processing a sacrificial material during manufacture of a microfabricated product

A substrate having a buffer layer and a barrier layer is formed. The buffer and barrier layers have different bandgaps such that an electrically conductive channel comprising a two-dimensional charge carrier gas arises at an interface between the buffer and barrier layers due to piezoelectric effects. The substrate is placed in a fluorine containing gas mixture that includes free radical state fluorine particles and is substantially devoid of ionic state fluorine particles. A first lateral surface section of the substrate is exposed to the gas mixture such that the free radical state fluorine particles contact the first lateral surface section without penetrating the substrate. A semiconductor device that incorporates first lateral surface section in the structure of the device is formed in the substrate.

Surface treatment of semiconductor substrate using free radical state fluorine particles

Methods of singulating substrates to form semiconductor devices using dummy material

A micro mechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure further includes a conductive base layer having a conductive base layer material. The conductive base layer material includes sectionally in a stiffening section a carbon material such that a carbon concentration of the carbon material in the conductive base layer material is at least 1014 per cubic cm and at least higher by a factor of 103 than in the conductive base layer material adjacent to the stiffening section.

Micro mechanical structure and method for fabricating the same

Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material

Growing community of inventors

Annenheim, Austria

Guenter Denifl