Industrial Technology Research Institute

National Science Council

National Science Council of Taiwan

Gue-Wuu Hwang

Show-An Chen

Ching Ting

Yi-Jen Chan

Bao-Tsan Ko

Chih-Ping Chen

Ching-Yen Wei

Chien-Ting Lin

Yi-Chun Chen

Chen-Pang Kung

Chun-Jung Chen

Po-Yuan Lo

Zing-Way Pei

Feng-Yu Yang

Meei-Yu Hsu

Chia-Chieh Chang

Heng-Tien Lin

Yi-Ling Chen

Chao-Ying Yu

Chien-Tien Chen

Jun-Rong Chen

Fang-Yuan Tsai

Yu-Ling Fan

Yi-Shin Lin

Jui-Fen Fan

Chingchen S Chiu

Yung-Chien Fu

Disclosed is a polymer having a chemical formula: wherein x is 10%&#x2dc;90%, y is 10% to 90%, and x+y=100%; Ris &#x2014;H, &#x2014;CH, &#x2014;CHCH, &#x2014;OCH, &#x2014;O(CH)CH, wherein n=1&#x2dc;12, &#x2014;NH, &#x2014;N(CH), N(CH)CH, wherein n=1&#x2dc;12, &#x2014;Br, &#x2014;Cl, &#x2014;OH, &#x2014;SONa, &#x2014;SO3H, or &#x2014;SOCl; Ris &#x2014;H, &#x2014;COOH, &#x2014;COOCH, &#x2014;COO(CH2)CH, wherein n=1&#x2dc;12, &#x2014;SONa, &#x2014;SOH, &#x2014;SOCl, &#x2014;OH, &#x2014;CONH, &#x2014;CON(CH), &#x2014;CON(CH)(CH), wherein n=1&#x2dc;12, &#x2014;Br, or &#x2014;Cl; and Ris &#x2014;SONa, &#x2014;SOH, &#x2014;POH, &#x2014;SOCl. &#x2014;OH, &#x2014;H, &#x2014;COOH, &#x2014;COOCH, &#x2014;COO(CH)nCH, wherein n=1&#x2dc;12, &#x2014;CONH, &#x2014;CON(CH), &#x2014;CON(CH)(CH), wherein n=1&#x2dc;12, &#x2014;Br, or &#x2014;Cl.

Polymer and conductive composition

Disclosed is a p-type organic semiconductor material having the formula: Each Con is the same and consists of a conjugated oligomer. Each EW is the same and consists of an electron withdrawing group. The p-type organic semiconductor material can be applied in an active layer of an optoelectronic device, such as an organic solar cell, an organic light-emitting diode, or an organic thin-film transistor.

P-type organic semiconductor material and optoelectronic device utilizing the same

A composition and a polymer are provided. The composition includes the polymer and a melamine derivative. The polymer has a formula of R is hydrogen, halide, alkyl group, alkoxyl group, haloalkyl group or nitro group. n is 1-5 of integer. x+y+z=1, x&#x3e;0, y&#x2267;0, z&#x2267;0. The melamine derivative includes Ris hydrogen, CH, or m and q independently is 1-10 of integer. R, Rand Rindependently is hydrogen, halide, or C-Calkyl group.

Composition and polymer

The invention discloses soluble polythiophene derivatives containing highly coplanar repeating units. The coplanar characteristic of side chain conjugated thiophene units improves the degree of the intramolecular conjugation and intermolecular &#x3c0;-&#x3c0; interaction. The polythiophene derivative exhibits good carrier mobility and is suitable for use in photo-electronic device such as organic thin film transistors (OTFT), organic light-emitting diodes (OLEDs), and organic solar cells (OSCs).

Soluble polythiophene derivative

A viscosity controllable highly conductive ink composition. The highly conductive ink composition comprises an organic solvent, nanoscale metal particles or metallo-organic decomposition compounds, and a thermally decomposable organic polymer. Specifically, since the thermally decomposable polymer can increase the viscosity of the highly conductive ink composition and be removed by subsequent thermal treatment, so as to decrease the impact on conductivity by organic polymer. Therefore, a viscosity-controllable conductive ink composition is obtained.

Highly conductive ink composition and method for fabricating a metal conductive pattern

A nano compound. The nano compound includes a metal or oxide thereof and an organic compound capable of oxidation and reduction bonded to the metal or oxide thereof. The invention also provides an organic memory device including the nano compound.

Nano compounds and organic memory devices comprising the same

Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.

Organic non-volatile memory material and memory device utilizing the same

The present invention provides a curable polyphenylene ether (PPE) resin, a composition made therefrom, and a process for preparing the resin. The process involves introducing a vinyl group-containing functional group to the terminal end of PPE by modifying the hydroxy and ester groups on the terminal end. Thus, a curable thermosetting PPE resin including a vinyl group on the terminal end can be obtained. Since the dehydrogenation of side chain methyl using n-BuLi is not conducted in the process of the present invention, the process is much easier, and the cost can be decreased.

Curable polyphenylene ether resin, composition made therefrom, and process for preparing the resin

The present invention discloses a process for preparing an aqueous solution of self-acid-doped o-sulfonic acid ring-substituted polyaniline, which can be cast into free-standing films. The process involves dissolving a solid o-sulfonic acid ring-substituted polyaniline in an alkaline aqueous solution to form an aqueous solution of an undoped o-sulfonate ring-substituted polyaniline; purifying the aqueous solution of the undoped o-sulfonate ring-substituted polyaniline by subjecting it to a purifying treatment to remove excess alkali therefrom; and contacting the resulting purified aqueous solution with a H.sup.+ -type ion-exchange resin to form an aqueous solution containing a self-acid-doped o-sulfonic acid ring-substituted polyaniline. A suitable water soluble polymer or polymer emulsion can be easily mixed with the aqueous solution containing the self-acid-doped o-sulfonic acid ring-substituted polyaniline to form a polymer blend.

Preparation of self-acid-doped sulfonic acid ring-substituted

The present invention discloses a water-soluble self-acid-doped polyaniline, and its sodium salt, which can be cast into free-standing films from their aqueous solutions. A process for preparing a water-soluble self-acid-doped polyaniline is also disclosed, which comprises reacting a polyaniline with a strong base to convert the amino nitrogen thereof to anionic nitrogen; reacting sultone with the anionic nitrogen to form a side chain alkanesulfonic acid group; doping with protonic acid to form precipitate; dissolving (undoping) the precipitate in an alkaline aqueous solution; removing excess alkali from the alkaline aqueous solution; and contacting the resulting aqueous solution with a H.sup.+ -type ion exchange resin. Moreover, an aqueous solution of the present water-soluble self-acid-doped PAn can be easily mixed with an additional water soluble polymer or polymer emulsion, which can then be cased into a polymer blend film having improved mechanical properties and coupling strength to a substrate.

Water-soluble self acid-doped polyaniline, method of preparation

Water-soluble self-acid-doped polyaniline, method of preparation

Growing community of inventors

Hsinchu, Taiwan

Gue-Wuu Hwang