Osram Opto Semiconductors Gmbh

Gudrun Lindberg

Lutz Höppel

Ion Stoll

Richard Baisl

Heribert Zull

Hans-Christoph Gallmeier

Sebastian Taeger

Mathias Kämpf

Thomas Reeswinkel

Klaus Müller

Stefan Hartauer

Kathrin Lampert

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one metallic surface, a contacted optoelectronic semiconductor chip configured to emit radiation and a protective layer arranged on the at least one metallic surface, wherein the protective layer comprises a protective material of at least one N-heterocyclic carbene, and wherein a covalent bond is formed between the protective material and the at least one metallic surface.

Optoelectronic component and method for producing an optoelectronic component

The invention relates to an optoelectronic device () comprising at least one outer surface () containing silicone (), chemical compounds, comprising an anchor group () and a head group (), being bonded to the silicone via the anchor group, and the adhesion of the regions of the silicone () present on the outer surface being reduced owing to the head groups of the chemical compounds. A method for producing an optoelectronic device is also disclosed.

Optoelectronic device and method for the production of an optoelectronic device

A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

Method for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip for the production of a radiation-emitting semiconductor component, and radiation-emitting semiconductor component

A suspension for protecting a semiconductor material, comprising a carrier medium, trimethylolpropane as a plasticizer, benzotriazole derivate as an absorber dye, and inorganic particles selected from the group consisting of aluminum nitride, silicon nitride and boron nitride, wherein the thermal conductivity of the suspension is about 1 W/mk to about 2 W/mk.

Suspensions for protecting semiconductor materials and methods of producing semiconductor bodies

An optoelectronic component includes a semiconductor layer sequence having an optoelectronically active region; a dielectric layer on the semiconductor layer sequence; and a metal layer on the dielectric layer, wherein an adhesion layer is arranged between the dielectric layer and the metal layer, the adhesion layer being covalently bonded to the dielectric layer and to the metal layer.

Method of producing an optoelectronic component having a sulfur-adhesion layer bonded to a dielectric layer

An optoelectronic component having an outer surface facing the environment of the optoelectronic component and which is formed by a hydrophobic layer applied at least partly on a surface of the optoelectronic component.

Optoelectronic component

A method of producing an optoelectronic component including providing an epitaxially grown layer sequence on a growth substrate, which comprises a suitable layer for light emission; applying a metal layer to the epitaxially grown layer sequence; applying a molding support to the metal layer, the molding support including a support material with a first coefficient of thermal expansion and a fiber mesh with a second coefficient of thermal expansion functionally bonded to the support material; and detaching the growth substrate.

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Bad Abbach, Germany

Gudrun Lindberg