Osram Opto Semiconductors Gmbh

Gudrun Diepold

Ralph Wirth

Stefan Illek

Walter Wegleiter

Andreas Ploessl

Ines Pietzonka

Peter Stauss

Wilhelm Stein

A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Method for fabricating a component having an electrical contact region

Method for fabricating a component having an electrical contact region, and component having an electrical contact region

Growing community of inventors

Wuppertal, Germany

Gudrun Diepold