Marvell International Limited

Agency for Science, Technology and Research

Guchang Han

Zhimin Yuan

Li Wang

Pantelis Sophoclis Alexopoulos

Bo Liu

Chun Lian Ong

Siang Huei Leong

Chenchen Jacob Wang

Weiya Xi

Khai Leong Yong

Jianzhong Shi

Kui Cai

Zhi Yong Ching

Chao Bi

Kheong Sann Chan

Quan Jiang

Qide Zhang

Budi Santoso

Jing Zhang

Moulay Rachid Elidrissi

Michael Tran

Chiew Leong Wong

Zhimin He

Mengjun Liu

Tiejun Zhou

Jiang Feng Hu

Leonard Gonzaga

Ke Gan

Wee Kiat Lim

Wuzhong Lin

Sufui Sophia Tan

Yansheng Ma

Shengkai Yu

Yin Quan Yu

Kannan Sundaravadivelu

Ningyu Liu

Cheow Hin Sim

Jianqiang Mou

Boon Long Ibrahim See

Venkataramanan Venkatakrishnan

Jinjun Qiu

Cheng Peng Tan

Wee Kay Yeo

Chong Wee Lee

Phyu Hla Nu

Wei Hua

Cheng Su Soh

According to embodiments of the present invention, a sensor array for reading data from a storage medium including a plurality of tracks is provided. The sensor array includes a first sensor, and a second sensor, wherein the first sensor and the second sensor are configured to obtain signals from adjacent tracks of the plurality of tracks of the storage medium, the signals being associated with data stored at the adjacent tracks. According to further embodiments of the present invention, a storage device and a method of reading data from a storage medium including a plurality of tracks are also provided.

Sensor array for reading data from a storage medium, storage device and method of reading data from a storage medium

A magnetoelectric device is provided. The magnetoelectric device includes a reference magnetic layer structure having a fixed magnetization orientation, and a synthetic antiferromagnetic layer structure including a free magnetic layer structure and a coupling magnetic layer structure antiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable, wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method for forming a magnetoelectric device and a writing method for a magnetoelectric device are also provided.

Magnetoelectric device, method for forming a magnetoelectric device, and writing method for a magnetoelectric device

According to an embodiment of the present invention, a data storage device comprising a motor having a stator is disclosed. The stator may include a substrate having a first surface and a second surface opposite to the first surface; and a n-phase winding arrangement having n phase windings; wherein each phase winding comprises m flat fractional-pitch coils arranged on the first surface of the substrate such that the coils are spaced apart uniformly along a closed loop and connected in series; wherein each coil together with an angular section of the substrate between the coil and an adjacent coil of the same phase winding defines a stator pole-pair; and wherein m is an integer larger than 1.

Data storage device

An ultrahigh differential current perpendicular to the plane dual spin valve read head with high pinning stability. The high pinning stability may be achieved using the same anti-ferromagnetic materials for two spin valves by introducing a double synthetic anti-ferromagnetic structure in one of the two spin valves.

Sensor arrangement

Growing community of inventors

Singapore, Singapore

Guchang Han