Omnivision Technologies, Inc.

Applied Materials, Inc.

Guannan Chen

Duli Mao

Gang Chen

Dyson Hsinchih Tai

Qin Wang

Lindsay Alexander Grant

Yuanwei Zheng

Cunyu Yang

Srinivas D Nemani

Michael Wayne Stowell, Jr

Mehul B Naik

Rutger Meyer Timmerman Thijssen

Qiwei Liang

He Ren

Bencherki Mebarki

Adib M Khan

Sing-Chung Hu

Nikolaos Bekiaris

Zhiyuan Wu

Jie Zhou

Gautam Pisharody

Eric Webster

An optical device and a method of forming an optical device having multi-depth optical device structures with a refractive index greater than or equal to 2.0 are provided. The optical devices and method include forming first matrix stack structures and second matrix stack structures. Adjacent first matrix stack structures form first vias having a first depth and adjacent second matrix stack structures form second vias having a second depth. The first depth of the first vias being different than the second depth of the second vias provides from the formation of submicron, multi-depth optical device structures when the vias are backfilled with a device material.

Method for forming multi-depth optical devices

An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

Fully buried color filter array of image sensor

An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.

Image sensor having a source follower transistor with a multi-thickness gate dielectric

An integrated circuit is fabricated by chemical vapor deposition or atomic layer deposition of a metal film to metal film.

Microwave anneal to improve CVD metal gap-fill and throughput

Growing community of inventors

San Carlos, CA, United States of America

Guannan Chen