Yangtze Memory Technologies Co., Ltd.

Guangyu Bai

Ke Liang

Li Xiang

Dejun Li

A memory device includes a peripheral circuit and a memory array coupled with the peripheral circuit. The memory array includes at least one memory block. The peripheral circuit includes at least one row decoder. One memory block is correspondingly connected with one row decoder. The row decoder includes a logic circuit and a level conversion circuit. The logic circuit is configured to generate a first control signal, a second control signal, and a first output signal based on an address signal and a status signal of the memory block correspondingly connected with the row decoder. A level of the second control signal is higher than a level of the first control signal. The level conversion circuit is configured to generate a second output signal based on the first output signal in response to the first control signal and the second control signal respectively.

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Hubei, China

Guangyu Bai