Honeywell International Inc.

The Alta Group, Inc.

Guangxin Wang

Harry W Rosenberg

Wesley LaRue

Bahri Ozturk

John A Lehman

Daniel M Hydock

The invention includes a method of forming a material which comprises at least two elements. More specifically, the method comprises providing an electrolytic cell comprising a cathode, an anode, and an electrolytic solution extending between the cathode and anode. A metallic product is electrolytically formed within the electrolytic cell. The forming of the metallic product comprises primarily electrorefining of a first element of the at least two elements and primarily electrowinning of a second element of the at least two elements. The invention also includes a mixed metal product comprising at least two elements, such as a product comprising tantalum and titanium.

Methods for electrically forming materials

Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

Capacitor containing high purity tantalum

Tantalum sputtering target and method of manufacture

The invention encompasses a method and apparatus for producing high-purity metals (such as, for example, high-purity cobalt), and also encompasses the high-purity metals so produced. The method can comprise a combination of electrolysis and ion exchange followed by melting to produce cobalt of a desired purity. The method can result in the production of high-purity cobalt comprising total metallic impurities of less than 50 ppm. Individual elemental impurities of the produced cobalt can be follows: Na and K less than 0.5 ppm each, Fe less than 10 ppm, Ni less than 5 ppm, Cr less than 1 ppm, Ti less than 3 ppm and O less than 450 ppm.

Apparatus for processing metals

Mixed metal materials

The invention encompasses a method and apparatus for producing high-purity metals (such as, for example, high-purity cobalt), and also encompasses the high-purity metals so produced. The method can comprise a combination of electrolysis and ion exchange followed by melting to produce cobalt of a desired purity. The method can result in the production of high-purity cobalt comprising total metallic impurities of less than 50 ppm. Individual elemental impurities of the produced cobalt can be follows: Na and K less than 0.5 ppm each, Fe less than 10 ppm, Ni less than 5 ppm, Cr less than 1 ppm, Ti less than 3 ppm and 0 less than 450 ppm.

Method for processing metals

The invention includes a method of forming a solid from at least two different powdered materials. A first and second of the different powder materials is compressed into a pellet. A melt pool is formed at a temperature which will melt both the first and second materials. The pellet is fed to the melt pool to melt the first and second materials, and the melted first and second materials are subsequently cooled to form the solid. The invention also includes a method of forming a solid which includes tantalum and silicon. The invention further includes a homogeneous solid comprising tantalum and silicon, and formed from a molten mixture of tantalum and silicon.

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Wexford, PA, United States of America

Guangxin Wang