Fns Tech Co., Ltd.

Innopad, Inc.

Thomas West, Inc.

Guangwei Wu

Oscar K Hsu

David Adam Wells

Paul Lefevre

Anoop Mathew

Scott Xin Qiao

Marc C Jin

John Erik Aldeborgh

Thomas E West

Donald Dietz

The present disclosure relates to a chemical mechanical planarization pad and a method of making and using a chemical mechanical planarization pad. The chemical mechanical planarization pad may include a first component including a water soluble composition and water insoluble composition exhibiting a solubility in water of less than that of the water soluble composition, wherein at least one of the water soluble and water insoluble compositions of the first component is formed of fibers. The chemical mechanical planarization pad may also include a second component, wherein the first component is present as a discrete phase in a continuous of the second component.

Multi-layered chemical-mechanical planarization pad

An aspect of the present disclosure relates to a chemical mechanical planarization pad including a first domain and a second continuous domain wherein the first domain includes discrete elements regularly spaced within the second continuous domain. The pad may be formed by forming a plurality of openings for a first domain within a second continuous domain of the pad, wherein the openings are regularly spaced within the second domain, and forming the first domain within the plurality of openings in second continuous domain. In addition, the pad may be used in polishing a substrate with a polishing slurry.

Chemical-mechanical planarization pad including patterned structural domains

A method of forming a chemical mechanical polishing pad. The method includes polymerizing one or more polymer precursors and forming a chemical-mechanical planarization pad including a surface, forming grooves in the surface defining lands between the grooves, wherein the grooves have a first width, and shrinking the lands from a first land length (L) at the surface to a second land length (L) at the surface, wherein the second land length (L) is less than the first land length (L) and the grooves have a second width (W) wherein (W)&#x2266;(X)(W), wherein (X) has a value in the range of 0.01 to 0.75.

Method of grooving a chemical-mechanical planarization pad

A polishing pad and a method of producing a polishing pad. The method includes providing a mold, having a first cavity and a second cavity, wherein the first cavity defines a recess, providing a polymer matrix material including void forming elements in the recess, forming a polishing pad and removing at least a portion of the elements from the polishing pad forming void spaces within the polishing pad by one of a chemical method or mechanical method, prior to use in chemical/mechanical planarization procedures.

Chemical mechanical planarization pad with void network

A chemical-mechanical planarization polishing pad is provided comprising a network of elements dispersed within a polymer, a plurality of voids formed in the pad and at least a portion of said network of elements is connected to at least a portion of the voids. A method of forming the pad is also disclosed, which comprises providing a composition, the composition comprising a network of elements and at least one of a polymer or a reactive prepolymer, introducing a gas to the composition and using the gas to produce a plurality of voids in the composition. A method of forming voids is also disclosed, which relies upon the application of a force to the network of elements within the polymer or reactive polymer, followed by removal of the force and void formation.

Polishing pad with controlled void formation

Pads and methods of making the pads for applications such as polishing substrates and chemical mechanical planarization of substrates are provided. The pads include a substantially smooth surface for improved performance.

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Sunnyvale, CA, United States of America

Guangwei Wu