Hgst Netherlands, B.v.

Western Digital Technologies, Inc.

Magic Technologies, Inc.

Headway Technologies, Incorporated

Guangli Liu

Quang Le

Simon H Liao

Xiaoyong Liu

Yongchul Ahn

David John Seagle

Ru-Ying Tong

Cheng Tzong Horng

Kochan Ju

Jui-lung Li

Hongquan Jiang

Witold Kula

Tai Min

Robert Beach

Youfeng Zheng

David Patrick Druist

Xiaozhong Dang

Thomas L Leong

Hardayal Singh Gill

Zheng Gao

Daniele Mauri

Chyu-Jiuh Torng

Aron Pentek

Stefan Maat

Suping Song

Liubo Hong

Yimin Hsu

Petrus Antonius Van Der Heijden

Ying Hong

Yunhe Huang

Shiwen Huang

Shuxia Wang

Tong Ru-Ying

A magnetic recording write head includes a spin torque oscillator (STO) between a seed layer disposed on a write pole and trailing shield. The seed layer has a cross-track width greater than the width of the STO and a depth in a direction orthogonal to the disk-facing surface of the write pole greater than the depth of the STO. A first insulating refill layer is formed on the sides of the seed layer and STO, and a second insulating refill layer in contact with the first refill layer has a thermal conductivity greater than that of the first refill layer. When current is passing through the STO, the seed layer spreads the current to reduce heating of the write pole and STO, and the bilayer refill material facilitates the transfer of heat away from the write pole and STO.

Magnetic recording write head with spin-torque oscillator (STO) and extended seed layer

Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.

Magnetic sensor using spin hall effect

A magnetic recording write head includes a spin torque oscillator (STO) between the write pole and trailing shield and an extended seed layer on the write pole beneath the STO. The seed layer has a cross-track width greater than the width of the STO and a depth in a direction orthogonal to the disk-facing surface of the write pole greater than the depth of the STO. A first insulating refill layer is formed on the sides of the extended seed layer and STO and a second insulating refill layer in contact with the first refill layer has a thermal conductivity greater than that of the first refill layer. When current is passing through the STO the extended seed layer spreads the current to reduce heating of the write pole and STO and the bilayer refill material facilitates the transfer of heat away from the write pole and STO.

A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jcwhile enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application

Embodiments disclosed herein generally relate to a magnetic head having a sensor stack and a bias material that is aligned in a direction perpendicular to a media facing surface. The sensor stack and a first portion of the bias material are laterally bookended by synthetic antiferromagnetic (SAF) structures, and a second portion of the bias material is laterally bookended by a dielectric material. In this configuration, the SAF structures are decoupled from the bias material, which minimizes the disturbance to the bias material.

Scissor reader with side shield decoupled from bias material

A magnetic sensor having a novel pinning structure resulting in a greatly reduced gap spacing. The sensor has a magnetic free layer structure that extends to a first stripe height and a magnetic pinned layer structure that extends to a second stripe height that is longer than the first stripe high. A layer of anti-ferromagnetic material is formed over the pinned layer structure in the region beyond the first stripe height location. In this way, the antiferromagnetic layer is between the pinned layer and the second or upper shield and does not contribute to gap spacing.

Magnetic sensor having an extended pinned layer with stitched antiferromagnetic pinning layer

A magnetic read sensor having a magnetic seed layer, a pinned layer structure formed over the magnetic seed layer, a non-magnetic barrier or spacer layer formed over the pinned layer structure and a magnetic free layer structure formed over the non-magnetic barrier or spacer layer. The pinned layer has a stripe height (measured from the media facing surface) that is greater than a stripe height of the magnetic free layer structure. In addition, the magnetic seed layer structure has a stripe height (also measured from the media facing surface) that is greater than the stripe height of the magnetic pinned layer structure and the magnetic free layer structure. The stripe height of the magnetic seed layer structure can be controlled independently of the stripe heights of the magnetic pinned layer structure and the magnetic free layer structure.

Magnetic read sensor with independently extended pinned layer and seed layer

A magnetic read head that has improved pinned layer stability while also maintaining excellent free layer stability. The free layer has sides that define a trackwidth of the sensor and a back edge that defines a functional stripe height of the sensor. However, the pinned layer can extend significantly beyond both the width of the free layer and the back edge (e.g. stripe height) of the free layer. The sensor also has a soft magnetic bias structure that compensates for the reduced volume presented by the side extension of the pinned layer. The soft magnetic bias structure can be magnetically coupled with the trailing magnetic shield, either parallel coupled or anti-parallel coupled. In addition, all or a portion of the soft magnetic bias structure can be exchange coupled to a layer of anti-ferromagnetic material in order to improve the robustness of the soft magnetic bias structure.

Magnetic sensor with extended pinned layer and partial wrap around shield

A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias structure. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.

Magnetic bias structure for magnetoresistive sensor having a scissor structure

A magnetic read sensor having an extended pinned layer structure and also having an extended free layer structure. The extended pinned layer structure and extended free layer structure both extend beyond the strip height of the free layer of the sensor to provide improved pinning strength as well as improved free layer biasing reliability and bias field strength.

Magnetic sensor having an extended pinned layer and shape enhanced bias structure

The present invention generally relates to a magnetic sensor in a read head having a hard or soft bias layer that is uniform in thickness within the sensor stack. The method of making such sensor is also disclosed. The free layer stripe height is first defined, followed by defining the track width, and lastly the pinned layer stripe height is defined. The pinned layer and the hard or soft bias layer are defined in the same process step. This approach eliminates a partial hard or soft bias layer and reduces potential instability issues.

Shape enhanced pin read head magnetic transducer with stripe height defined first and method of making same

A magnetic read sensor having a hard bias structure that extends beyond the back edge of the sensor stack by a controlled, distance that is chosen to maximize both hard bias field and hard bias magnetic coercivity and anisotropy. The hard bias structure has a back edge that is well defined and that has a square corner at its innermost end adjacent to the sensor stack. The magnetic sensor can be constructed by a process that includes a separate making an milling process that is dedicated to defining the back edge of the hard bias structure.

Magnetic sensor having hard bias structure for optimized hard bias field and hard bias coercivity

A magnetic scissor type magnetic read head having magnetic side shielding for reduced effective track width and having side biasing for improved stability. The read head includes first and magnetic side shields that each include first and second magnetic layers and an anti-parallel exchange coupling layer sandwiched there-between. The magnetic layers of the side shields are anti-parallel coupled with one another such that one of the magnetic layers has its magnetization oriented in a first direction parallel with the air bearing surface and the second magnetic layer has its magnetization oriented in a second direction that is opposite to the first direction and also parallel with the air bearing surface. These magnetizations of the first and second magnetic layers provide a bias field that stabilizes the magnetization of the free magnetic layers of the sensor stack to prevent flipping of the magnetizations of these layers.

Scissor magnetic read head with wrap-around magnetic shield

Embodiments generally relate to a magnetic read sensor and a method for its manufacture. A multi-layer insulating material may be used to cover both the first shield layer and also the sidewalls of the sensor structure in the magnetic read sensor. The first insulating layer of the multi-layer insulating material may be deposited by an ion beam sputtering process in a chamber that does not have any oxygen gas flowing into it so that oxygen diffusion into the sensor structure is reduced or eliminated. Then, a second insulating layer of the multi-layer insulating material may be deposited by atomic layer deposition such that the second insulating layer has a greater quality than the first insulating layer. The higher quality increases the breakdown voltage for the magnetic read sensor. Thus, the magnetic read sensor of the present invention has an effective insulating portion that increases the breakdown voltage without sensor damage.

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Pleasanton, CA, United States of America

Guangli Liu