Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

The South China University of Technology

Beijing Boe Display Technology Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group

Guangcai Yuan

Xue Dong

Dongfang Wang

Ce Ning

Zhanfeng Cao

Qi Yao

Shi Shu

Ke Fei Wang

Bin Zhou

Jun Cheng

Lei Wang

Feng Zhang

Wei Li

Peng Liu

Chao Li

Ming Wang

Yang Zhang

Lei Chen

Chen Hui Xu

Jing Li

Zhi Hu Wang

Wei Yang

Fuqiang Li

Minghua Xuan

Dongni Liu

Fei Wang

Xiaochuan Chen

Yongqian Li

Gang Wang

Feng Qu

Xin Yang

Wei He

Li Li

Wei Wang

Wei Liu

Xi Chen

Jianbo Xian

Liang Chen

Can Zhang

Pan Xu

Li Xiao

Jianguo Wang

Can Wang

Zheng Liu

Zhongyuan Wu

Chunping Long

Haoliang Zheng

Jing Liu

Han Yue

Yun Qiu

Xin Gu

Zhiwei Liang

Haixu Li

Tongshang Su

Yingwei Liu

Hehe Hu

Liangchen Yan

Ce Zhao

Haitao Huang

Chuanxiang Xu

Qinghe Wang

Zhijun Lv

Lizhong Wang

Leilei Cheng

Zhongyuan Sun

Yong Yu

Zhengliang Li

Jun Feng Liu

Hua Yin Huang

Zhichong Wang

Dejiang Zhao

Jinxiang Xue

Ning Liu

Qi Qi

Chunsheng Jiang

Dongsheng Li

Xiao Lin Zhang

Libo Wang

Zhiqiang Jiao

Liwen Dong

Wenbin Jia

Kai Xu

Song Liu

Wenqu Liu

Xiang Sean Zhou

Shijun Wang

Yi Chen

Wei Peng Huang

Yingzi Wang

Pengxia Liang

Tong Yang

Liye Duan

Lijun Yuan

Lei Zhao

Wenjun Xiao

Hui Guo

Chenyang Zhang

Liangliang Li

Fangzhen Zhang

A display substrate includes a base; and a first display region and a second display region disposed on the base, where a light transmittance of the first display region is greater than a light transmittance of the second display region, and the first display region includes one or more first sub-regions and one or more second sub-regions; where the one or more first sub-regions include a plurality of first sub-pixels, and each of the first sub-pixels includes a first electrode disposed on the base, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer. A display panel, a display device and a method of manufacturing a display substrate are further disclosed.

Display substrates for full-screen display and methods of manufacturing display substrate, display panels, display devices

A method for manufacturing a light field display device and a light field display device are provided, the method includes: forming a plano-concave lens layer on a substrate, and the plano-concave lens layer comprises a plurality of plano-concave lenses arranged in an array and a plurality of alignment marks arranged at preset positions; forming a first planarization layer covering the plano-concave lens layer to form a microlens array, the first planarization layer having a refractive index greater than a refractive index of the plano-concave lens layer; attaching the light-emitting side of the display panel to a side of the microlens array away from the substrate according to the alignment mark.

Method for manufacturing light field display device and light field display device

Provided in the present disclosure are a pattern recognition module and a display apparatus. The pattern recognition module includes: a pattern recognition substrate, which includes a base substrate, and a plurality of photosensitive devices arranged in an array and located on one side of the base substrate; and a light constraint layer, which is in direct contact with the side of the pattern recognition substrate that is provided with the plurality of photosensitive devices, and includes at least one diaphragm layer, and a micro-lens layer located on the side of the diaphragm layer that is away from the pattern recognition substrate.

Pattern recognition module and display apparatus

A thin film transistor, a shift register unit, a gate driving circuit and a display panel are provided. The M source branches and the N drain branches extend along a first direction and are arranged at intervals; in each of the P source-drain units, the M source branches and the N drain branches are alternately arranged, and M is greater than or equal to N; a semiconductor layer includes sub-channel regions between one drain branch and one source branch adjacent to each other; a sum of widths of the sub-channel regions of the P source-drain units in the first direction is W, and an average length of the sub-channel regions of the P source-drain units in a direction perpendicular to the first direction is L; 12≤W/L≤400, P, M and N are integers greater than or equal to 1, and P×N≥4.

Thin film transistor, shift register unit, gate driving circuit and display panel

The disclosure provides an apparatus for transferring LED chips, including: first light source configured to generate and emit first light rays; first support structure configured to carry load substrate, load substrate including light-transmissive substrate and the LED chips fixed on side of the light-transmissive substrate away from first light source by dissociation adhesive; second support structure configured to carry to-be-transferred substrate on side of the LED chips away from light-transmissive substrate; and optical control mechanism on side of light-transmissive substrate away from the LED chips and configured to control propagation direction of first light rays that irradiate onto first radiation region of the optical control mechanism to form target light rays that irradiate onto target radiation region of load substrate, so that dissociation adhesive in target radiation region is dissociated to transfer LED chips in target radiation region to to-be-transferred substrate.

Apparatus for transferring light-emitting diode chip

At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

Oxide thin film transistor and preparation method thereof, and display device

Provided is an array substrate. The array substrate includes a display region and a non-display region located at a periphery of the display region, wherein the array substrate includes a substrate; a first transistor and a second transistor that are disposed on the substrate, wherein the first transistor is disposed in the display region, and the second transistor is disposed in the non-display region; and a data line and a pixel electrode that are disposed in the display region, wherein the data line is disposed on a side of the first active layer close to the substrate and is lapped with the first active layer, and the pixel electrode is disposed on a side of the first gate facing away from the substrate and is lapped with the first active layer.

Array substrate and manufacturing method thereof, and display panel

A back plate and a manufacturing method thereof, a method for bonding a chip, and a display device are provided. The back plate includes: a base substrate; and, a plurality of conductive connecting tubes disposed on the base substrate, wherein one end of each of the conductive connecting tubes is connected to the base substrate, and a side wall of each of the conductive connecting tubes is provided with an opening penetrating the side wall. And, the method for bonding a chip includes: providing the back plate; inserting an electrode of the chip into a corresponding conductive connecting tube from an end of the conductive connecting tube away from the base substrate; and heating the conductive connecting tube and the chip, so that the electrode of the chip is electrically connected to the conductive connecting tube.

Back plate and manufacturing method thereof, method for bonding chip, and display device

A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate. The micro-nano channels have a high resolution or an ultra-high resolution, and have different sizes and shapes.

Micro-nano channel structure, sensor and manufacturing method thereof, and microfluidic device

A display panel includes a light-emitting substrate, an opposite substrate, and an intermediate layer assembly between the light-emitting substrate and the opposite substrate. The light-emitting substrate has a light-emitting surface configured to allow light to be emitted from, and the light emitted from the light-emitting surface is directed to the opposite substrate. The intermediate layer assembly includes a thin film encapsulation layer, a filler layer, and an overcoat that are sequentially stacked in a pointing direction vertically pointing from the light-emitting substrate to the opposite substrate. The thin film encapsulation layer includes at least two encapsulation sub-layers that are stacked in the pointing direction. In the pointing direction, refractive indexes of the encapsulation sub-layers gradually increase. A refractive index of the overcoat is higher than a refractive index of the filler layer.

Display panel and display apparatus

A display panel, a manufacturing method thereof, and a display device. The manufacturing method comprises: sequentially forming a sacrificial layer and a flexible substrate on a surface of a side of a rigid base plate; forming a connection-via pair in the flexible substrate; forming a conductive layer on the flexible substrate, and forming connection portions; forming a leveling layer; forming driving circuits corresponding one-to-one to the connection-via pairs on the flexible substrate, and forming a driving chip on a side of the driving circuits facing away from the flexible substrate, the driving chip being electrically connected to the driving circuits; separating the sacrificial layer from the flexible substrate; and forming a micro LED device on a surface of the flexible substrate facing away from the driving circuits, the micro LED device being electrically connected to the connection portions.

Display panel, manufacturing method thereof, and display device

An array substrate includes a base substrate, a driving circuit layer, and a functional device layer which are sequentially stacked; the driving circuit layer is provided with first driving circuits, and each first driving circuit at least includes a driving transistor; and the driving circuit layer includes a first gate layer, a first gate insulation layer, a semiconductor layer, a second gate insulation layer, a second gate layer, an interlayer dielectric layer, and a source-drain metal layer which are sequentially stacked on one side of the base substrate.

Array substrate and display panel including electrically connected gates

A display backboard and a manufacturing method thereof, and a display device are provided. The display backboard includes: a driving substrate; a plurality of driving electrodes on the driving substrate; and a plurality of connection structures respectively on the plurality of driving electrodes. The connection structure includes: at least one conductive component on the driving electrode; and a restriction component on a side of the driving electrodes provided with the at least one conductive component and in at least a part of a peripheral region of the at least one conductive component. The restriction component protrudes from the driving electrode and has a first height in a direction perpendicular to the driving substrate.

Display backboard and manufacturing method thereof and display device

The display substrate includes a base substrate () including a display area (AA) and a peripheral area (BB) on at least one side of the display area (AA); and an infrared sensor () on the base substrate (). The infrared sensor () is integrated in the peripheral area (BB). The infrared sensor () includes a first electrode (), a photoelectric conversion function layer () and a second electrode () that are arranged in a stacked manner. The first electrode () is arranged adjacent to the base substrate (), the second electrode () is made of a transparent conductive material, and the infrared sensor () collects infrared rays reflected by an eye from a side where the second electrode () is located.

Display substrate, display panel, and near-eye display device and display method thereof

A polarizer, an electronic device and a method of preparing the polarizer are provided. The polarizer includes a base substrate and a metal wire grid structure provided on the base substrate. The metal wire grid structure includes a plurality of metal wire grid layers and one or more dielectric layers stacked between adjacent metal wire grid layers of the metal wire grid layers. Each of the plurality of metal wire grid layers includes a plurality of metal wire strips periodically arranged in a first direction parallel to a surface of the base substrate, and each of the plurality of metal wire grid layers is stacked in a second direction perpendicular to the surface of the base substrate, and a period of the metal wire strips in each of the plurality of metal wire grid layers is less than or equal to 300 nm.

Polarizer, electronic device and method of preparing polarizer

Growing community of inventors

Beijing, China

Guangcai Yuan