Vanguard International Semiconductor Corporation

Guang-Yuan Jiang

Hsiu-Mei Yu

Wei-Chan Chang

Cheng-Yi Hsieh

Chang-Sheng Lin

A semiconductor device includes: a substrate; a seed layer disposed on the substrate; a compound semiconductor stack layer disposed on the seed layer; and a source metal layer and a drain metal layer disposed on the compound semiconductor stack layer. The semiconductor device further includes a conductive layer at least partially covering the source metal layer and the drain metal layer, and covering opposing side surfaces of the seed layer and opposing side surfaces of the compound semiconductor stack layer. The conductive layer electrically connects the seed layer and the source metal layer.

Semiconductor device and method forming the same

A method for manufacturing a package structure includes providing a carrier board; providing at least one die having a top surface, a bottom surface, and a side surface on the carrier board; and forming a protective layer to cover at least a portion of the side surface of the die. The die includes a substrate, a semiconductor layer, a gate structure, a source structure and a drain structure, at least one dielectric layer, and at least one pad. The semiconductor layer is disposed on the substrate. The gate structure is disposed on the semiconductor layer. The source and the drain structures are disposed on opposite sides of the gate structure. The dielectric layer covers the gate, source, and drain structures. The pad is disposed on the dielectric layer and penetrates through the dielectric layer to electrically contact with the gate, source or drain structure.

Growing community of inventors

Hsinchu, Taiwan

Guang-Yuan Jiang