United Microelectronics Corp.

Guang-Yu Lo

Chung-Fu Chang

Chun-Tsen Lu

Chun-Chia Chen

Kuan-Hung Chen

Ssu-I Fu

Chih-Kai Hsu

Yu-Hsiang Lin

Chin-Hung Chen

Chia-Jung Hsu

Chun-Ya Chiu

Po-Wen Su

A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

Semiconductor device and method for fabricating the same

The present invention discloses a method for forming a semiconductor device with a reduced silicon horn structure. After a pad nitride layer is removed from a substrate, a hard mask layer is conformally deposited over the substrate. The hard mask layer is then etched and trimmed to completely remove a portion of the hard mask layer from an active area and a portion of the hard mask layer from an oblique sidewall of a protruding portion of a trench isolation region around the active area. The active area is then etched to form a recessed region. A gate dielectric layer is formed in the recessed region and a gate electrode layer is formed on the gate dielectric layer.

Method of manufacturing a semiconductor device

Growing community of inventors

Taipei, Taiwan

Guang-Yu Lo