Motorola Corporation

Guang X Li

Frank A Shemansky, Jr

Zuoying Lisa Zhang

Juergen A Foerstner

Ronald J Gutteridge

Eric D Joseph

Muh-Ling Ger

John E Schmiesing

Paul L Bergstrom

Barun K Kar

Daniel N Koury, Jr

Shang-Hui Larry Tu

A yaw rate motion sensor ( ) that includes a driving element ( ) having a first axis for oscillating generally in the direction of the first axis upon application of a driving voltage. The motion sensor ( ) includes a sensing element ( ) for sensing relative differences in capacitance occasioned from the driving element upon application of a Coriolis force induced by an angular rotation and linkage ( ) between the driving element ( ) and the sensing element ( ).

Yaw rate motion sensor

A sensor has an electrode (,) that is movable along three mutually perpendicular axes (,). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (,) along the three axes (,).

Sensor and method of use

A differential capacitor structure (,) formed overlying a substrate (,) having a middle layer (,) disposed between a lower layer (,) and an upper layer (,). The lower layer (,) is a static layer that is formed on the substrate (,), the middle layer (,) has a moveable component and is a dynamic layer attached to the substrate (,) using semi-circular tether supports (,), and the upper layer is a static layer that is anchored to the substrate (,). The semi-circular tether supports (,) are formed from a homogeneous material and provide structural stiffness to support the middle layer (,) in space and also provide stress relief.

Differential capacitor structure

A sensor has an electrode (120) that is movable along three mutually perpendicular axes (10, 11, 12). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (120) along the three axes (10, 11, 12).

A semiconductor sensing device (10) for sensing a lateral acceleration includes a field effect transistor (132) fabricated along a sidewall (114) of a trench (112) formed in a substrate (11). A movable gate (12) overlies a channel region (138) of the field effect transistor (132). In response to a lateral acceleration perpendicular to the sidewall (114) of the trench (112), the movable gate (12) moves relative to the substrate (11) in a direction substantially perpendicular to the sidewall (114). The conductive state of the channel region (138) depends on the distance between the movable gate (12) and the channel region (138) and changes in response to the lateral acceleration Thus, the motion of the movable gate (12) modulates a current flowing in the field effect transistor (132). The lateral acceleration is sensed by sensing the current flowing in the field effect transistor (132).

Semiconductor sensing device and method for fabricating the same

A method of fabricating a sensor (100) includes providing a substrate (200), providing a stationary comb structure (117, 118) overlying the substrate (200), providing a movable seismic mass (101) overlying the substrate (200) and movable relative to the substrate (200) and the stationary comb structure (117, 118), and providing a dielectric layer (500, 800) between the stationary comb structure (117, 118) and the movable seismic mass (101). The dielectric layer (500) increases the sensitivity of the sensor (100) and also prevents the movable seismic mass (101) from shorting together with the stationary comb structure (117, 118).

Method of fabricating a sensor

A semiconductor device (15) having a sensor (11) and a transistor (10) formed on a monolithic semiconductor substrate (16). The sensor (11) has a source region (41), a drain region (42), and a microstructure (12) which is formed from a conductive layer (28). The microstructure (12) modulates a channel region between the source and drain regions (41,42). The transistor has a gate structure, a portion of which is formed from the same conductive layer (28) used to form the microstructure (12). Anneal steps are performed on the conductive layer (28) to remove stress prior to the formation of source and drain regions (34,36) of the transistor (10). A self-test structure (14) is formed adjacent to the microstructure (12) which is used to calibrate and verify the operation of the sensor (11).

Monolithic semiconductor device having a microstructure and a transistor

Converting a Coriolis force into an electrical signal, an electro-mechanical transducer (10) is a field effect transistor (18) having angular velocity sensing capabilities. A gate electrode (16) is suspended over a channel region (60) of a substrate (31), is biased at a desired potential, and is oscillated along an axis (40). The gate electrode (16) and the substrate (31) are rotated about a different axis (41) at an angular velocity (44). The resulting Coriolis force displaces the suspended gate electrode (16) along yet another axis (42) which modulates a current (53) in the channel region (60) of the substrate (31). The amplitude of the current (53) describes the magnitude of the angular velocity (44).

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Gilbert, AZ, United States of America

Guang X Li