Siliconware Precision Industries Co., Ltd.

Guang-Hwa Ma

Shih-Ching Chen

Shih-Kuang Chiu

Hsin-Yi Liao

Lu-Yi Chen

Yan-Heng Chen

Chang-Lun Lu

Chun-Hung Lu

Jung-Pang Huang

Hsiao-Chun Huang

Cheng-Hsu Hsiao

Hsien-Wen Chen

Kuang-Hsin Chen

Chun-Hung Lin

Chung-Te Yuan

A package structure is provided, which includes: a dielectric layer having opposite first and second surfaces; a circuit sub-layer formed in the dielectric layer; an electronic element disposed on the first surface of the dielectric layer and electrically connected to the circuit sub-layer; a plurality of conductive posts formed on the first surface of the dielectric layer and electrically connected to the circuit sub-layer; and an encapsulant formed on the first surface of the dielectric layer and encapsulating the electronic element and the conductive posts. Upper surfaces of the conductive posts are exposed from the encapsulant so as to allow another electronic element to be disposed on the conductive posts and electrically connected to the circuit sub-layer through the conductive posts, thereby overcoming the conventional drawback that another electronic element can only be disposed on a lower side of a package structure and improving the functionality of the package structure.

Package structure and fabrication method thereof

An electronic package is provided, which includes: a circuit structure having opposite first and second sides; at least an electronic element disposed on the first side of the circuit structure; an encapsulant formed on the first side of the circuit structure for encapsulating the electronic element; a dielectric layer formed on portions of the second side of the circuit structure; and a metal structure formed on the dielectric layer and the circuit structure. The metal structure has a first metal layer bonded to the circuit structure and a second metal layer formed on the first metal layer and the dielectric layer. Therefore, by replacing a conventional silicon interposer with the circuit structure, the invention eliminates the need to fabricate through silicon vias so as to greatly reduce the fabrication difficulty and cost. The invention further provides a method for fabricating the electronic package.

Electronic package having circuit structure with plurality of metal layers, and fabrication method thereof

An electronic package is provided, which includes: a first circuit structure; at least first electronic element disposed on a surface of the first circuit structure; at least a first conductive element formed on the surface of the first circuit structure; a first encapsulant encapsulating the first electronic element and the first conductive element; and a second circuit structure formed on the first encapsulant and electrically connected to the first conductive element. By directly disposing the electronic element having high I/O functionality on the circuit structure, the invention eliminates the need of a packaging substrate having a core layer and thus reduces the thickness of the electronic package. The invention further provides a method for fabricating the electronic package.

Electronic package and fabrication method thereof

A semiconductor package includes: a dielectric layer having opposite first and second surfaces; a semiconductor chip embedded in the dielectric layer and having a plurality of electrode pads; a plurality of first metal posts disposed on the electrode pads of the semiconductor chip, respectively, such that top ends of the first metal posts are exposed from the first surface; at least a second metal post penetrating the dielectric layer such that two opposite ends of the second metal post are exposed from the first and second surfaces, respectively; a first circuit layer formed on the first surface for electrically connecting the first and second metal posts; and a second circuit layer formed on the second surface for electrically connecting the second metal post. The semiconductor package dispenses with conventional laser ablation and electroplating processes for forming conductive posts in a molding compound, thereby saving fabrication time and cost.

Fabrication method of semiconductor package

An interconnection structure for a package is disclosed. The interconnection structure includes a substrate body having a conductive portion formed on a surface thereof; a first photosensitive dielectric layer formed on the surface of the substrate body and having a via for exposing the conductive potion; a conductive via formed in the via; a second photosensitive dielectric layer formed on the first photosensitive dielectric layer and having a opening for exposing the conductive via and a portion of the first photosensitive dielectric layer; and a conductive trace layer formed in the opening of the second photosensitive dielectric layer so as to be electrically connected to the conductive portion through the conductive via, thereby simplifying the fabrication process and reducing the fabrication cost and time.

Interconnection structure for package and fabrication method thereof

A semiconductor substrate is provided, including: a substrate; a plurality of conductive through vias embedded in the substrate; a first dielectric layer formed on the substrate; a metal layer formed on the first dielectric layer; and a second dielectric layer formed on the metal layer. As such, when a packaging substrate is disposed on the second dielectric layer, the metal layer provides a reverse stress to balance thermal stresses caused by the first and second dielectric layers, thereby preventing warpage of the semiconductor substrate.

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Taichung, Taiwan

Guang-Hwa Ma