Alcatel Lucent

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Thales

Avanex Corporation

Centre National De La Recherche Scientifique

Alcatel

Université Paris-Sud 11

Nokia Solutions and Networks Oy

Guang-Hua Duan

Alexandre Shen

Romain Brenot

Alban Le Liepvre

Frédéric Van Dijk

Jean-Marc Fedeli

Thierry Hessler

Badhise Ben Bakir

Bruno Mourey

Hakon Helmers

Sylvain Delage

Laurent Vivien

Nicolas Chimot

Béatrice Dagens

Francois Brillouet

Jean-Louis Gentner

Arnaud Leroy

Delphine Marris-Morini

Gilles Rasigade

François Duport

Antoine Descos

Jo&euml;l Jacquet

Melissa Ziebell

Guilhem De Valicourt

Marco Lamponi

Badhise B Bakir

Helen Debregeas-Sillard

Gaël Kervella

Hélène Debregeas-Sillard

Badhise Ben-Bakir

An optoelectronic component includes an optical transducer made of III-V semiconductor material and an optical scanning microelectromechanical system comprising a mirror. The optical transducer and the optical scanning microelectromechanical system are produced on a common wafer comprising at least a first layer made of silicon or silicon nitride with a thickness of less than one micron and wherein at least the mirror and its holding springs are produced. In a first variant, the mobile parts of the optical scanning microelectromechanical system are produced in various layers of silicon. In a second variant, the mobile parts of the optical scanning microelectromechanical system are produced in the layer of III-V semiconductor material.

Optoelectronic component comprising, on a single substrate, an optical transducer made of a semi-conductor material III-V and an optically scanning microelectromechanical system

In the field of narrow linewidth laser sources and a laser device that comprises a laser source and a waveguide of determined refractive index with which it is coupled, a waveguide is single-mode and includes at least four reflectors in the form of trenches etched into the waveguide and irregularly distributed along the waveguide, the distance separating two neighbouring reflectors being above 1 &#x3bc;m, and the waveguide and the laser source have respective lengths such that the length of waveguide over which the reflectors are located is greater than the length of the laser source itself.

Laser source with reduced linewidth

The present invention concerns a method for controlling the emitting wavelength of a laser source () for a passive optical network, the laser source () comprising:

Method for controlling the wavelength of a laser source

A wavelength tunable laser emission device () comprises: a first waveguide () comprising an optical amplification means for producing a stimulated light emission, the first waveguide extending in a longitudinal direction of the emission device, a second waveguide () made of silicon on silicon dioxide and disposed parallel to the first waveguide spaced from the first waveguide in a vertical direction of the emission device so as to allow the existence of a hybrid optical mode coupled at one and the same time to the second waveguide and to the first waveguide, the second waveguide comprising a distributed reflector () along the second waveguide, the second waveguide comprising transverse zones () doped differently so as to form a polar junction oriented in a transverse direction of the emission device. Electrodes () coupled to the doped transverse zones modify an effective index seen by the hybrid optical mode.

Tunable laser emission device

A coupler/splitter including two neighboring coplanar waveguide portions extending in a same direction, the first portion having a constant cross-section, the second portion having a variable cross-section so that the effective index of the second waveguide portion varies, in the upstream-to-downstream direction, from a first lower value to a second value higher than the effective index of the first portion, in adiabatic coupling conditions.

Polarization splitting optical coupler having an interposed guide segment extending between first and second coplanar waveguides

An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe&#x2014;Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.

Integrated optical structure comprising an optical isolator

An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This causes a first set of polarization modes to move in a spectral space with a different velocity than a second set of polarization modes. A bias current, or voltage, is used for controlling the overall birefringence effect in the device. The biasing for controlling the birefringence effect is performed such the TE modes and the TM modes of the device are made to coincide in their respective spectral position. Thus the device is made insensitive, or presents substantially reduced sensitivity, to the polarization of any incoming optical signal.

Method of and photonic device for eliminating or substantially reducing sensitivity to polarization of an injected optical signal and method of manufacturing such photonic device

In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.

Process for making a slot-type optical waveguide on silicon

A stabilised gain semiconductor optical amplifier (CG-SOA) includes and active waveguide () comprising an amplification medium (), extending in longitudinal (Z), lateral (X) and vertical (Y) directions, and coupled to a laser oscillation structure comprising at least two resonant cavities () extending in first (D) and second (D) directions which are different from the longitudinal direction (Z) of the active waveguide () and arranged in such a way as to permit the establishment of laser oscillations having at least two different relaxation oscillation frequencies.

Semiconductor optical amplifier with lateral and distributed gain stabilisation

The field of the invention is that of the semiconductor optical devices used in particular for fibre-optic telecommunications. To function efficiently, a certain number of semiconductor devices require the use of light polarized in a given polarization state. When knowledge of the polarization the state is lost, the optical element according to the invention makes it possible to polarize the light again in a known polarization state. By using two of these elements in combination with a coupler, it is possible to produce a device which fulfils the same function as a polarization splitter. This optical assembly delivers two output signals whose polarization states are the projections of the initial polarization onto two orthogonal axes. The main advantage of these devices is that they are produced using polarization rotators based on photonic crystals, and they can consequently be integrated easily into semiconductor devices, which the use of discrete polarizers does not allow.

Compact polarizer and associated device for semiconductor devices

An optical resonant cavity ( ) defined between two mirrors ( ), one of which ( ) is a variable pitch Bragg reflector grating, is characterized in that a parameter C of variation of the Bragg wavelength of the grating is such that the cavity resonates continuously from a first optical frequency to a second optical frequency higher than the first optical frequency. The invention can be used in particular to produce broadband band-pass filters with steep flanks, broadband amplifiers with no gain fluctuation, and continuous emission spectrum lasers and light-emitting diodes.

Optical cavity resonating over a continuous range of frequencies

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Palaiseau, France

Guang-Hua Duan