Taiwan Semiconductor Manufacturing Comp. Ltd.

Guang-Hong Cheng

Huan-Just Lin

Te-Chih Hsiung

Yuan-Tien Tu

Yi-Chen Wang

Wen Chang Wang

A semiconductor device includes a channel structure, a first gate structure straddling the channel structure, and an epitaxial structure. The epitaxial structure is adjacent to the first gate structure and is coupled to an end of the channel structure. The semiconductor device further includes a first contact structure disposed over and in contact with the epitaxial structure and a nitride-based conformal layer extending at least over the first contact structure. The semiconductor device further includes an oxide-based layer disposed over the nitride-based conformal layer. A portion of the nitride-based conformal layer, disposed over the first contact structure, has a dip that is filled with a first portion of the oxide-based layer.

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Hsinchu, Taiwan

Guang-Hong Cheng