Boe Technology Group Co., Ltd.

Peking University

Hefei Boe Display Technology Co., Ltd.

Guanbao Hui

Shi Shu

Feng Zhang

Yonglian Qi

Zhanfeng Cao

Seungjin Choi

Lu Liu

Jianshe Xue

Zhen Liu

Bin Zhang

Weifeng Zhou

Cuili Gai

Zhengliang Li

Chunsheng Jiang

Fangzhen Zhang

Luke Ding

Jincheng Gao

Ji Min Zhang

Jingxia Gu

Teng Ye

Lianmao Peng

Xuelei Liang

Jiye Xia

Boyuan Tian

Qiuping Yan

Qi Yao

Liang Chen

Can Wang

Youngsuk Song

Seongyeol Yoo

Wenlin Zhang

Ning Zhang

Young Suk Song

Xiangchun Kong

Weiwei Hu

Guanglong Guo

Haiyan Zhao

The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.

Organic transistor and manufacturing method thereof, array substrate, display device

A thin film transistor, a method for manufacturing a thin film transistor, an array substrate and a display apparatus are provided. The thin film transistor includes a gate, a source, a drain and an active layer provided on a base substrate, both the source and the drain are electrically connected to the active layer, at least one of the source, the drain and the gate is a light-absorbing electrode, which comprises an electrode body and a light-absorbing layer, and the light-absorbing layer is arranged at a side of the electrode body facing towards the active layer.

Thin film transistor and method for manufacturing the same, array substrate and display apparatus

The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.

Thin-film transistor including carbon nanotubes, manufacturing method, and array substrate

The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.

Carbon nanotube thin film transistor and manufacturing method thereof

A fabricating method of color filter substrate includes a step of forming a black matrix pattern and a color filter layer pattern on a substrate. The black matrix pattern partitions a plurality of sub-pixel regions on the substrate, the color filter layer covers over the plurality of sub-pixel regions, the sub-pixel region includes a transmissive region and/or a reflective region. Before forming the color filter layer pattern the fabricating method further comprises a step of forming a plurality of recesses on the substrate. Each transmissive region in the sub-pixel regions corresponds to a respective recess in terms of location. Correspondingly, the invention provides a color filter substrate fabricated by such fabricating method, as well as a display device comprising such color filter substrate. The fabricating method as provided by the present invention can achieve an effect of color coordination and reduce the number of processes and the thickness of the planarizing protective layer.

Fabricating method of color filter substrate, color filter substrate and display device

Embodiments of the disclosure provide a manufacturing method of a TFT array substrate, a TFT array substrate and a display device. The TFT array substrate comprises a thin film transistor and a pixel electrode formed on a base substrate, the pixel electrode is electrically connected with a drain electrode of the thin film transistor. The array substrate further comprises an light-shielding pattern provided above the thin film transistor.

Manufacturing method of TFT array substrate, TFT array substrate and display device

The disclosed technology provides a TFT-LCD pixel electrode layer structure comprising: a pixel electrode pattern corresponding to a display region of a liquid crystal panel; a peripheral region pattern corresponding to a non-display region of the liquid crystal panel; and a periphery filling pattern in a portion of the non-display region where no peripheral region pattern is formed. The disclosed technology may be applied to manufacture of a liquid crystal display. The disclosed technology further provides a method for forming a TFT-LCD pixel electrode layer structure and a mask therefor.

Pixel electrode layer structure with periphery filling pattern of TFT-LCD, method for manufacturing the same and mask therefor

The present disclosure provides a photosensitive resin composition and a method for forming a quantum dot pattern using the same. The photosensitive resin composition includes quantum dots which are dispersed in the photosensitive resin composition and each has a modification layer. The method for forming a quantum dot pattern includes coating, exposing and developing a photoresist to obtain the quantum dot pattern, wherein the photoresist is the above-mentioned photosensitive resin composition.

Photosensitive resin composition and method for forming quantum dot pattern using the same

A method for fabricating a COA array substrate, an array substrate and a display device are provided. The fabrication method comprises the following steps: forming a protection layer () on the TFT substrate (); coating a photoresist layer () on the protection layer (), the photoresist layer () functioning as a planarized layer (), wherein the TFT substrate () comprises a substrate () and a TFT (); forming a color filter receiving hole () in the photoresist layer () through a photolithography process; fabricating the color filter layer () in the color filter receiving hole (). The above fabrication method can reduce the complexity and cost of conventional method for fabricating the array substrate.

Method for fabricating COA array substrate, array substrate and display device

An embodiment of the disclosed technology provides a pixel structure, comprising a TFT, a reflective region and a transmissive region, wherein the reflective region comprises a reflective region insulation layer, a reflection layer on the reflective region insulation layer and a reflective region pixel electrode on the reflection layer, and the transmissive region comprises a transmissive region pixel electrode, wherein the reflective region pixel electrode and the transmissive region pixel electrode form an integral structure, and the integral structure of the pixel electrodes is connected with the drain electrode of the TFT, wherein the organic layer in the reflective region is formed on an array substrate prior to a gate electrode of the TFT, and the reflection layer in the reflective region and the gate electrode of the TFT are formed in a same patterning process by using a same metal layer.

Pixel structure, LCD panel, and manufacturing method thereof

The present disclosure provides a COA substrate, a display device and a method for manufacturing the COA substrate. The COA substrate includes a base substrate, a TFT array arranged on the base substrate, a protective layer covering the TFT array, and a color filter including a color pixel and a white pixel, wherein the white pixel is made of a photoresist material.

COA substrate, display device and method for manufacturing COA substrate

A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor comprises: a gate electrode (), a source electrode () and a drain electrode (), and the thin film transistor further comprises a buffer layer () which is directly provided at one side or both sides of at least one of the gate electrode (), the source electrode () and the drain electrode (), wherein, the buffer layer () and at least one of the gate electrode (), the source electrode () and the drain electrode () directly contacting the buffer layer () are conformal. Therefore, the adhesion between an electrode of the thin film transistor and a film layer contacting it is improved and at the same time an atom in the electrode of the thin film transistor is effectively prevented from diffusing to the film layer connected with it, and the reliability of the thin film transistor is improved and the production cost is reduced.

Thin film transistor, manufacturing method thereof and array substrate

A fabrication method of a substrate, relates to a field of a display technology, which can avoid a deviation between a line width of a black matrix or a color filter layer actually fabricated and a preset line width, so that the black matrix can just completely shield thin film transistor, a data line and a gate line, and meanwhile the black matrix or the color filter layer more refined are obtained, which improves the display effect of the liquid crystal display. The fabrication method of the substrate comprises: forming a to-be-treated layer, forming a light-shielding layer on the to-be-treated layer, and forming a pattern of the light-shielding layer by a patterning process, wherein the light-shielding layer is made of metal; performing a patterning process on the to-be-treated layer by using the pattern of the light-shielding layer as a mask; and removing the light-shielding layer.

Fabrication method of substrate

A bottom-emitting substrate, a display device and a method for manufacturing the bottom emitting substrate are provided. The bottom-emitting substrate comprises: a base substrate (); a black matrix layer () with a plurality of opening regions and a plurality of non-opening regions disposed on the base substrate (); and an array substrate unit disposed on the black matrix layer (), projections of metal layers in the array substrate unit on the black matrix layer () locating within the plurality of non-opening regions of the black matrix layer (). A method for manufacturing the bottom-emitting substrate and a display device comprising the bottom-emitting substrate are also provided.

Bottom-emitting substrate, display device and manufacturing method of substrate

The present invention relates to the field of display technology, and particularly to a double-sided touch display device which comprises a touch feedback electrode, a first touch receiving electrode and a second touch receiving electrode, wherein the first touch receiving electrode and the second touch receiving electrode are provided at both sides of the touch feedback electrode, respectively. The double-sided touch display device achieve functions of both double-sided touch and transparent display, and has a simple structure and low production cost.

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Beijing, China

Guanbao Hui