Taiwan Semiconductor Manufacturing Comp. Ltd.

Guan-Yao Tu

Chung-Chi Ko

Wan-Yi Kao

Hsiang-Wei Lin

Wei-Ken Lin

Li Chun Te

Shu Ling Liao

Te-En Cheng

Yu-Yun Peng

Tze-Liang Lee

Dian-Hau Chen

Hsiang-Ku Shen

Szu-Ping Tung

Su-Jen Sung

Chen-Chiu Huang

Hong-Wei Chan

Wen-Tzu Chen

Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.

Low-K feature formation processes and structures formed thereby

A method includes forming a transistor over a front side of a substrate; forming a front-side interconnect structure over the transistor, the front-side interconnect structure comprising layers of conductive lines, and conductive vias interconnecting the layers of conductive lines; forming a first bonding layer over the front-side interconnect structure; forming a second bonding layer over a carrier substrate; bonding the front-side interconnect structure to the carrier substrate by pressing the first bonding layer against the second bonding layer; and forming a backside interconnect structure over a backside of the substrate after bonding the front-side interconnect structure to the carrier substrate.

Integrated circuit structure and method for forming the same

A semiconductor device includes a transistor structure disposed over a substrate, a first interlayer dielectric (ILD) layer disposed over the transistor structure, a second ILD layer disposed over the first ILD layer, and a first resistor wire disposed on the second ILD layer, and a second resistor wire disposed on the second ILD layer. A sheet resistance of the first resistor wire is different from a sheet resistance of the second resistor wire.

Method of manufacturing a semiconductor device and a semiconductor device

A semiconductor device structure is provided. The structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The structure also includes a sealing element extending along a sidewall of the gate stack. The sealing element has a first atomic layer and a second atomic layer, and the first atomic layer and the second atomic layer have different atomic concentrations of carbon. The structure further includes a spacer element over the sealing element.

Semiconductor device structure with gate spacer

Low-k feature formation processes and structures formed thereby

A s semiconductor device structure is provided. The structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The structure also includes a spacer element extending along a sidewall of the gate stack. The spacer element has a first portion, a second portion, a third portion, and a fourth portion. Each of the first portion, the second portion, the third portion, and the fourth portion conformally extends along the sidewall of the gate stack. The second portion is sandwiched between the first portion and the third portion, and the third portion is sandwiched between the second portion and the fourth portion. Each of the first portion and the third portion has a first atomic concentration of carbon, and each of the second portion and the fourth portion has a second atomic concentration of carbon. The second atomic concentration of carbon is different than the first atomic concentration of carbon.

A structure and a formation method of a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate and forming a sealing layer over a sidewall of the gate stack using an atomic layer deposition process in a process chamber. The atomic layer deposition process includes alternately and sequentially introducing a first precursor gas and a second precursor gas over the sidewall of the gate stack to form the sealing layer. The second precursor gas has a different atomic concentration of carbon than that of the first precursor gas. The atomic layer deposition process also includes removing a reaction byproduct from the process chamber after the first precursor gas is introduced and before the second precursor gas is introduced. The method also includes partially removing the sealing layer to form a sealing element over the sidewall of the gate stack.

Structure and formation method of semiconductor device with gate spacer

A structure and a formation method of a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate. The method also includes forming a sealing layer over a sidewall of the gate stack using an atomic layer deposition process. The atomic layer deposition process includes alternately and sequentially introducing a first silicon-containing precursor gas and a second silicon-containing precursor gas over the sidewall of the gate stack to form the sealing layer. The second silicon-containing precursor gas has a different atomic concentration of carbon than that of the first silicon-containing precursor gas. The method further includes partially removing the sealing layer to form a sealing element over the sidewall of the gate stack.

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Hsinchu, Taiwan

Guan-Yao Tu