Chimei Innolux Corporation

Innolux Corporation

Chimel Innolux Corporation

Guan-Hua Yeh

Hong-Gi Wu

Wei-Lun Liao

Tsai-Lai Cheng

Chia-Mei Liu

Chai-Mei Liu

Hsiao-Ping Lai

A touch display panel is provided and includes a substrate, a plurality of gate lines, a plurality of data lines, a plurality of data output lines, a plurality of thin film transistors, and a plurality of detection capacitors. The gate lines are disposed on the substrate. The data lines are disposed on the substrate. The data lines and the gate lines define a plurality of pixel regions on the substrate. The data output lines are disposed on the substrate, and each data output line is disposed next to one data line. The thin film transistors are respectively disposed in the pixel regions. Each thin film transistor is electrically connected to the corresponding gate line and the corresponding data line. The detection capacitors are respectively disposed in the pixel regions. Each detection capacitor is electrically connected to the corresponding gate line and the corresponding data line.

Touch display panels and manufacture methods thereof

A thin film transistor (TFT) substrate includes a transparent substrate, a plurality of TFTs and a photosensitive capacitor formed on the transparent substrate. A capacitance of the photosensitive capacitor is variable on the condition of environment brightness. A method for manufacturing the TFT substrate and an LCD using the TFT substrate are also provided.

TFT substrate, LCD device using same and method for manufacturing TFT substrate

A method for fabricating a flexible display device includes providing a carrier substrate, forming a sacrificial layer on the carrier substrate, forming a metal layer and a buffer layer on the sacrificial layer in that order, forming at least one active device on the buffer layer, and separating the metal layer and the carrier substrate by laser treatment.

Method for fabricating a flexible display device

An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode contact region of a second type TFT is formed. In step S, the source electrode contact region and the drain electrode contact region of the first type TFT are heavily doped with a first dopant. In step S, gate electrodes of the first and the second type TFT are formed. In step S, the source electrode contact regions and drain electrode contact regions of the first and second type TFTs are heavily doped with a second dopant. The first dopant and the second dopant are compensative, and the number ratio of the first dopant to the second dopant is approximately 2 to 1.

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Miao-Li, Taiwan

Guan-Hua Yeh