National Semiconductor Corporation

Gu-Fung David Tsuei

Min-hwa Chi

In a semiconductor device, a thin film resistor is formed by making use of an interconnect structure and etching back the layers over the glue layer of the interconnect structure and using the glue layer as a thin film resistor.

Method of forming an integrated resistor

A color active pixel sensor cell is formed by utilizing four photodiodes which are each covered with a layer of oxide. The thicknesses of the layers of oxide are set so that a first layer of oxide prohibits red light from entering the first photodiode, a second layer of oxide prohibits green light from entering the second photodiode, a third layer of oxide prohibits blue light from entering the third photodiode, and a fourth layer of oxide allows visible light to enter the fourth photodiode. The amount of red light received by the cell is then determined by subtracting the light energy collected by the first photodiode from the light energy collected by the fourth photodiode. Similarly, the amount of green and blue light received by the cell is determined by subtracting the light energy collected by the second and third photodiodes, respectively, from the amount of light energy collected by the fourth photodiode.

Growing community of inventors

Sunnyvale, CA, United States of America

Gu-Fung David Tsuei