Infineon Technologies Ag

Grzegorz Lupina

Jens Peter Konrath

Romain Esteve

Wolfgang Bergner

Ravi Keshav Joshi

Stefan Woehlert

Stefan Krivec

Andreas Voerckel

Jochen Hilsenbeck

Stefan Kramp

Florian Grasse

Hiroshi Narahashi

Richard Gaisberger

A semiconductor device includes a contact metallization layer that includes aluminum and is arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, an organic passivation layer comprising a first part that is arranged on the contact metallization layer, and a second part that is arranged on the inorganic passivation structure, a first layer structure including a first part that is in contact with the contact metallization layer, a second part that is contact with the inorganic passivation structure, and a third part that is disposed on the semiconductor substrate laterally between the inorganic passivation structure and the organic passivation layer.

Semiconductor device and method for forming a semiconductor device

A semiconductor device includes a contact metallization layer arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, and an organic passivation layer. The organic passivation layer is located between the contact metallization layer and the inorganic passivation structure, and located vertically closer to the semiconductor substrate than a part of the organic passivation layer located on top of the inorganic passivation structure.

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Villach, Austria

Grzegorz Lupina