Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Grishma Shah

Nian Niles Yang

Philip David Reusswig

Deepanshu Dutta

Sahil Sharma

Yan Li

Jian Feng Chen

Daniel Edward Tuers

Phil Reusswig

Dmitry Vaysman

Kenneth Louie

Idan Alrod

Dana Lee

Jeffrey W Lutze

Chang Hua Siau

Deepak Raghu

Farookh Moogat

Eran Sharon

Alexander Bazarsky

Jack Frayer

Hua-Ling Cynthia Hsu

Eran Erez

Chris Nga Yee Avila

YenLung Li

Gopinath Balakrishnan

Alexander Kwok-Tung Mak

Jonathan Hsu

Joanna Lai

Min Peng

Preeti Yadav

Prasanna Desai Sudhir Rao

Smita Aggarwal

Chris Yip

Kapil Verma

Masaaki Higashitani

Sergey Anatolievich Gorobets

Jianmin Huang

Man Lung Mui

Jiahui Yuan

Huai-Yuan Tseng

Robert W Ellis

Zhenlei Shen

Chris Avila

Mohan Dunga

Gautam Ashok Dusija

Aaron Keith Olbrich

Xinde Hu

Karin Inbar

Julian Vlaiko

Changyuan Chen

Biswajit Ray

Tai-Yuan Tseng

Ali K Al-Shamma

Rohit Sehgal

Sarath Chandran Puthenthermadam

Khanh Vinh Nguyen

Alex Bazarsky

Muhammad Masuduzzaman

Vidyabhushan Mohan

Nan Lu

Eli Elmoalem

Alexander K Mak

Yi-Chieh Chen

Lanlan Gu

Chris Nga Yee Yip

Rajan Paudel

Deepak Bharadwaj

Hanan Borukhov

Siddhesh Darne

Bin Wu

Ronen Golan

Abuzer Azo Dogan

Venky Ramachandra

Navkiran Kaur Sandhu

Roie Shpaizman

Eakta Anchila

An apparatus includes control circuits configured to connect to word lines that are coupled to NAND strings. The control circuits are configured to detect a defective word line, apply single word line erase voltages to the word lines to erase memory cells of the defective word line and, with the memory cells of the defective word line in an erased state, read data from neighboring memory cells of the NAND strings.

Data recovery in nonvolatile memory with defective word line

Aspects of a storage device including a memory and a controller are provided, which allow for error detection or data integrity checking during data transfer of write operations and read operations. The controller may be configured to generate data integrity information based on at least one data byte to be written to the memory, and to transfer the at least one data byte contemporaneously with the data integrity information on separate data paths to the memory. The controller may be configured to select between transferring data bus inversion information or the data integrity information based on whether a data integrity protection mode is active between the memory and the controller. The memory may be configured to receive the at least one data byte and the data integrity information from the controller, and detect whether an error exists in the at least one data byte based on the data integrity information.

Toggle mode interface for data integrity protection

For a non-volatile memory system with a multi-plane memory die having a large block size, to be able to more readily accommodate zone-based host data using zones that are of a smaller size that the block size on the memory, the memory system assigns data from different zones to different subsets of the planes of a common memory die. The memory system is configured to accumulate the data from the different zones into different write queues and then assemble the data from the different write zones into pages or partial pages of data that can be simultaneously programmed into memory cells connected to different word lines that are in different sub-blocks of different blocks in the corresponding assigned planes of the die.

Plane programming scheme for non-volatile memory with large block sizes

Upon detecting power loss during the process of programming multi-level cell (MLC) memory in a storage system, the storage system takes steps to prevent data loss. In one example, the controller sends a graceful shutdown command to the memory, in response to which the memory aborts the ongoing programming operation and stores data from data latches associated with unprogrammed memory cells in single-level cell (SLC) memory. The memory can also store data from programmed memory cells in the SLC memory. The data to be programmed in the MLC memory can be reconstructed prior to powering down the storage system or after the storage system is powered back up. The reconstructed data can then be programmed in the MLC memory.

Storage system and method for data protection during power loss

A data storage device including, in one implementation, a NAND memory and a controller. The NAND memory includes a read/write circuit configured to determine and store initial physical column addresses for each plane included in the NAND memory. The controller is configured to send a read-transfer command and a one-byte address to the NAND memory. The read/write circuit is also configured to retrieve a first initial physical column address from the initial physical column addresses stored in the NAND memory after the NAND memory receives the one-byte address from the controller. The first initial physical column address is associated with a die address and a plane address included in the one-byte address. The read/write circuit is further configured to retrieve a first set of data stored at the first initial physical column address. The read/write circuit is also configured to output the first set of data to the controller.

Overhead reduction in data transfer protocol for NAND memory

The present disclosure generally relates to thermal throttling a nonvolatile memory device in a data storage device. Nonvolatile memory devices can sustain higher temperatures for a limited duration of time as part of the lifecycle/operation of the device. By allowing for a small margin of time at a higher temperature of operation, the maximum capability of the data storage device is increased. In so doing, the data storage device reliability can be maintained while increasing the device performance.

SSD operation in a nonoptimal memory environment

The present disclosure discloses a memory device including a control system for thermal throttling. The control system acquires the temperature of a non-volatile memory element from a temperature detector at a first frequency. Upon determining that the temperature of the non-volatile memory element is above a pre-determined threshold, the control system acquires the temperature of the non-volatile memory element from the temperature detector at a second frequency that is higher than the first frequency and activates the thermal throttling for the non-volatile memory element.

Thermal throttling for memory devices

A non-volatile memory system may include a non-volatile memory die storing a requested data set that a host requests to be read. In response to the host request, a copy of a data set may be retrieved from the non-volatile memory die without performing error correction on an entry identifying a physical address where the data set is stored. If the data set copy matches the requested data set, the data set copy may be sent to the host. If the data set copy does not match the requested data set, then error correction may be performed on a copy of the entry to identify the correct physical address where the requested data set is stored. A copy of the requested data set may then be retrieved and sent to the host.

Optimistic read operation

In one embodiment, there is a system comprising a first group of blocks connected to a first address line, a second group of blocks connected to a second address line separate and distinct from the first address line, a host controller (or memory device) configured to: allocate a single open block to each of: the first group of blocks connected to the first address line that transmits an address signal generated by a first peripheral circuitry module, and the second group of blocks connected to the second address line that transmits an address signal generated by a second peripheral circuitry module; in response to receiving a first program request: program the open block in the first group of blocks connected to the first address line in response to a first program request in response to receiving a second program request separate and distinct from the first program request: forego programming any of the blocks in the first group of blocks connected to the first address line; and program one of the blocks in the second group of blocks connected to the second address line.

System and method for avoiding back to back program failure

A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to determining that the memory device has the characteristic indicative of the temperature crossing, determine that the memory device satisfies an availability criterion. The controller is further configured to, in response to determining that the memory device satisfies the availability criterion, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.

Memory die temperature adjustment based on a power condition

Apparatuses, systems, methods, and computer program products are disclosed for performing read mode tuning. An apparatus includes an error rate storage circuit that determines error rate information. An apparatus includes a mode selection circuit that determines a read mode of a plurality of read modes for reading a set of memory cells based on error rate information. The plurality of read modes may include a fast read mode and a normal read mode. An apparatus includes a read circuit that performs a read on a set of memory cells based on a read mode.

Read mode tuning

Apparatuses, systems, methods, and computer program products are disclosed for performing a group read refresh. An apparatus includes a plurality of memory groups. An apparatus includes an operation circuit that performs an operation on a selected memory group of a plurality of memory groups. An apparatus includes a remediation circuit that performs a countermeasure operation on an unselected memory group of a plurality of memory groups in response to an operation on a selected memory group.

Group read refresh

A storage system and method for reducing XOR recovery time are provided. In one embodiment, a storage system is provides comprising a memory and a controller. The controller is configured to generate a first exclusive-or (XOR) parity for pages of data written to the memory; after the first XOR parity has been generated, determine that there is at least one page of invalid data in the pages of data written to the memory; and generate a second XOR parity for the pages of data that excludes the at least one page of invalid data, wherein the second XOR parity is generated by performing an XOR operation using the first XOR parity and the at least one page of invalid data as inputs. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

Storage system and method for reducing XOR recovery time by excluding invalid data from XOR parity

Growing community of inventors

Milpitas, CA, United States of America

Grishma Shah