Dow Corning Corporation

Doe Corning Corporation

Grish Chandra

Loren A Haluska

Keith W Michael

Gregg A Zank

Peter Y Lo

Robert Charles Camilletti

Edwin P Plueddemann

Lenin J Petroff

Ronald H Baney

Jeffrey A Kosal

Carl J Bilgrien

Donnie Ray Juen

Clayton R Bearinger

Gretchen S Kohl

Yolanda A Peters

Peter Y Kwai Lo

Theresa E Martin

James A Tassoff

Theresa Eileen Gentle

A silicon dioxide containing coating can be used for multi-layer hermetic coatings, interlayer dielectric coatings, and flat panel display coatings. The coating is formed by applying a coating composition comprising polysilastyrene to a substrate and heating the polysilastyrene in an oxidizing atmosphere.

Silicon dioxide containing coating

A borosilicate containing coating is formed on an electronic substrate by applying a borosilazane polymer on the substrate and converting it to borosilicate by heating in an oxidizing environment. The resultant thick planarizing coatings are useful as protective coatings and dielectric inner layers.

Borosilicate electronic coatings

A method of adhering an electronic component to substrate in which a layer of a preceramic polymer is applied between the electronic component and the substrate to which it is to be adhered followed by heating to convert the preceramic polymer into a ceramic. The method forms a strong bond which is not affected by the environment. The method is valuable for adhering integrated circuit chips to carriers or circuit boards.

Use of preceramic polymers as electronic adhesives

A silica-containing coating is formed on an electronic substrate by applying a polycarbosilane on the substrate and converting it to a silica-containing material by heating in an oxidizing environment. The resultant thick planarizing coatings are useful as protective coatings and dielectric inner layers.

Coating electronic substrates with silica derived from polycarbosilane

Disclosed is a method of increasing the adhesion between gold and silica derived from hydrogen silsesquioxane resin. The method comprises joining the gold and silica followed by annealing under an oxidizing atmosphere.

Enhanced adhesion of H-resin derived silica to gold

This invention relates to integrated circuits which are protected from the environment. Such circuits are hermetically sealed by applying ceramic layers to the top metallization.

Hermetic protection for integrated circuits

A silica coating is formed on an electronic substrate by applying a silazane polymer on the substrate and converting it to silica by heating in an oxidizing environment. The resultant thick planarizing coatings are useful as protective coatings and dielectric inner layers.

Coating electronic substrates with silica derived from silazane polymers

This invention relates to a method of forming a ceramic coating on a substrate. The method comprises coating the substrate with a solution comprising a solvent and a silica precursor followed by evaporating the solvent to form a preceramic coating. The preceramic coating is then exposed to an environment comprising ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added to facilitate conversion of the silica precursor to the ceramic coating. The preceramic coating is then subjected to a temperature sufficient to facilitate conversion of said preceramic coating to a ceramic coating.

Low temperature process for converting silica precursor coatings to

The present invention is based on the discovery that rapid thermal processing (RTP) can convert hydrogen silsesquioxane resin coatings to ceramic silica coatings. This technique is especially valuable for the application of protective and dielectric layers on electronic devices.

Rapid thermal process for obtaining silica coatings

Preceramic actylenic polysilanes are described which contain --(CH.sub.2).sub.w C.tbd.CR' groups attached to silicon where w is an integer from 0 to 3 and where R' is hydrogen, an alkyl radical containing 1 to 6 carbon atoms, a phenyl radical, or an --SiR''.sub.3 radical wherein R'' is an alkyl radical containing 1 to 4 carbon atoms. The acetylenic polysilanes are prepared by reacting chlorine- or bromine-containing polysilanes with either a Grignard reagent of general formula R'C.tbd.C(CH.sub.2).sub.w MgX' where w is an integer from 0 to 3 and X' is chlorine, bromine, or iodine or an organolithium compound of general formula R'C.tbd.C(CH.sub.2).sub.w Li where w is an integer from 0 to 3. The acetylenic polysilanes can be converted to ceramic materials by pyrolysis at elevated temperatures under an inert atmosphere.

Preceramic acetylenic polysilanes

Carboxyalkyl-substituted organopolysiloxanes are prepared by hydrolysis of a silalactone composition having the formula ##STR1## where n has an average value greater than zero, R and Q are hydrocarbon and X is Cl or Br. Silicon-containing compounds having the formula R.sub.a Z.sub.b SiO.sub.(4-a-b)/2, where Z is a hydrolyzable radical, can be cohydrolyzed therewith. The novel silalactone composition is prepared by gently heating a mixture of an ester having the formula X.sub.2 R SiQCO.sub.2 R' and a halide salt catalyst, such as tetrabutylammonium bromide.

Silalactones and methods for their preparation and use

A process for the preparation of preceramic metallopolysilanes is described. The process consists of contacting and reacting organohalogendisilanes with metal-containing compounds in the presence of a redistribution catalyst in an inert, essentially anhydrous atmosphere while removing volatile byproducts. The resulting metallopolysilanes contain significant amounts of aluminum, boron, chromium, lanthanum, molybdenum, neodymium, niobium, samarium, tantalum, titanium, tungsten, vanadium, yttrium, or zirconium. Such metallopolysilanes can be prepared with relatively low oxygen levels. These polymers are useful as chemical intermediates to synthesize organosilicon materials or polymers. These polymers are also useful, when fired at high temperatures, to form ceramic materials.

Process for the preparation of preceramic metallopolysilanes and the

A simplified method of manufacture for platinum (O) alkyne complexes is disclosed, as well as novel platinum (O) alkyne complexes per se. The complexes are made by reacting platinum-vinylsiloxane complexes with alkynes. The complexes are used in hydrosilylation, hydrogenation, isomerization and oligomerization reactions. Curable silicones using these platinum (O) alkyne complexes as curing catalysts are also disclosed.

Platinum (O) alkyne complexes and a method for their preparation

Platinum (O) alkyne complexes

A new method for making platinum-phosphine complexes and novel platinum-phosphine-vinylsiloxane complexes are disclosed. These complexes can be used in curable silicone compositions, thus providing curable silicone compositions of greatly enhanced stability at room temperature. The ability of the compositions to cure at elevated temperatures is not significantly compromised.

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Midland, MI, United States of America

Grish Chandra