University of California

USA As Represented by Secretary of the Navy

Northrop Grumman Systems Corporation

Gregory Todd Lewis

Yoram Cohen

Karl D Hobart

Travis J Anderson

Marko J Tadjer

Andrew D Koehler

Vincent Gambin

Joshua D Caldwell

Tatyana I Feygelson

Ioulia Smorchkova

Bradford B Pate

Mark Goorsky

Rajinder S Sandhu

Eugene I Imhoff

Jeff McKay

Myung-Man Kim

Nancy Hsiao-Yu Lin

A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.

Selective deposition of diamond in thermal vias

A method of modifying a polymeric, inorganic, or organic-functionalized substrate surface is provided. In one embodiment, an atmospheric pressure (AP) plasma stream is directed at a substrate surface, leading to the formation of surface-bound active sites that function as polymerization initiators. When contacted with a monomer or monomer solution, the active sites facilitate formation of a dense array of graft polymers covalently bound to the substrate surface. In another embodiment, an inorganic substrate is cleaned, conditioned in a humidity chamber, treated with an AP plasma, and contacted with a monomer or monomer solution to facilitate formation and growth of graft polymers on the substrate surface.

Atmospheric pressure plasma-induced graft polymerization

In one embodiment, a method of modifying a surface of a membrane includes exposing the surface to an impinging atmospheric pressure plasma source to produce an activated surface, and exposing the activated surface to a solution including a vinyl monomer. In another embodiment, a method of manufacturing a desalination membrane includes treating a surface of the membrane with an impinging atmospheric plasma source for an optimal period of time and rf power, and exposing the surface to an aqueous solution containing a vinyl monomer. In another embodiment, an apparatus includes a membrane having a surface, and polymer chains terminally grafted onto the surface of the membrane.

Fouling and scaling resistant nano-structured reverse osmosis membranes

Growing community of inventors

Los Angeles, CA, United States of America

Gregory Todd Lewis