General Electric Company

Gregory Thomas Dunne

Peter Almern Losee

Alexander Viktorovich Bolotnikov

Kevin Sean Matocha

Ljubisa Dragoljub Stevanovic

Victor Lienkong Lou

Embodiments of a silicon carbide (SiC) device are provided herein. In some embodiments, a silicon carbide (SiC) device may include a gate electrode disposed above a SiC semiconductor layer, wherein the SiC semiconductor layer comprises: a drift region having a first conductivity type; a well region disposed adjacent to the drift region, wherein the well region has a second conductivity type; and a source region having the first conductivity type disposed adjacent to the well region, wherein the source region comprises a source contact region and a pinch region, wherein the pinch region is disposed only partially below the gate electrode, wherein a sheet doping density in the pinch region is less than 2.5&#xd7;10cm, and wherein the pinch region is configured to deplete at a current density greater than a nominal current density of the SiC device to increase the resistance of the source region.

Silicon carbide device and method of making thereof

Methods are provided for improving inversion layer mobility and providing low defect density in a semiconductor device based upon a silicon carbide (SiC) substrate. More specifically, embodiments of the present method provide for the formation of a gate oxide on a silicon carbide substrate comprising oxidizing the substrate with a gaseous mixture comprising oxygen at a temperature of at least about 1300&#xb0; C. Semiconductor devices, such as MOSFETS, based upon a substrate treated according to the present method are expected to have inversion layer mobilities of at least about 12 cm/Vs.

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Rexford, NY, United States of America

Gregory Thomas Dunne