Advanced Technology Materials, Inc.

Intel Corporation

Lucent Technologies Inc.

Entegris, Inc.

Gregory T Stauf

Jeffrey F Roeder

Thomas H Baum

Bryan Clark Hendrix

Chongying Xu

Tianniu Chen

Matthias Stender

William Hunks

Philip S H Chen

Peter S Kirlin

Robin A Gardiner

Brian A Vaartstra

Melissa A Petruska

Peter Van Buskirk

Robin L Binder

Jiming Zhang

Adrien Lavoie

Joseph D Sweeney

Peter C Van Buskirk

Jose I Arno

W Karl Olander

Harsono S Simka

Oleg Byl

Robert E Kaim

Juan E Dominguez

Sharad N Yedave

John J Plombon

Duncan W Brown

James A Dietz

Frank DiMeo, Jr

Joseph Han

Gautam Bhandari

Thomas M Cameron

Ing-Shin Barry Chen

Weimin Li

Jeffrey W Neuner

Paul J Marganski

Roderick Kent Watts

Steven E Bishop

Henry Miles O'Bryan

David James Eldridge

Philip S Chen

Daniel B Studebaker

Philip SH Chen

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Antimony and germanium complexes useful for CVD/ALD of metal thin films

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350&#xb0; C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Low temperature deposition of phase change memory materials

A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF, XeF, XeF, NF, IF, IF, SF, CF, F, CF, KrF, Cl, HCl, ClF, ClO, NF, NF, NF, NFH, NHF, HOBr, Br, CF, CF, CF, CHF, CHF, CHF, COF, HF, CHF, CHF, CHF, CHF, CHF, CF, and organochlorides such as COCl, CCl, CHCl, CHCland CHCl.

Cleaning of semiconductor processing systems

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350&#xb0; C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.

Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill

An integrated circuit barrier structure disposed between high dielectric constant metal oxide and Cu or Al electrodes, for preventing diffusion of species such as oxygen, bismuth, or lead from the high dielectric constant metal oxide into the Cu or Al electrodes. Such barrier structure also protects the Cu or Al electrodes against oxidization during deposition of the high dielectric constant metal oxide. The barrier structure can be formed as (1) a single layer of Pt, Ir, IrO, IrO, Ru, RuO, CuO, CuO, AlO, or a binary or ternary metal nitride, e.g., TaN, NbN, HfN, ZrN, WN, WN, TiN, TiSiN, TiAlN, TaSiN, or NbAlN, or (2) double or triple layers of such materials, e.g., Pt/TiAlN, Pt/IrO, Pt/Ir, Ir/TiAlN, Ir/IrO, IrO/TiAlN, IrO/Ir, or IrO/IrO/Ir. Such barrier structures enable Cu or Al electrodes to be used in combination with high dielectric constant metal oxides in microelectronic structures such as ferroelectric stack and trench capacitors, non-volatile ferroelectric memory cells, and dynamic random access memory (DRAM) cells.

Barrier structures for integration of high K oxides with Cu and Al electrodes

A Zr-doped (Ba,Sr)TiO perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1&times;10 A/cm under applied voltage of about &plusmn;3V or above and at temperature of about 100&deg; C. or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd) -polyamine, Sr(thd) -polyamine, Zr(thd) , and Ti(OiPr) (thd) at a deposition temperature in the range from about 560&deg; C. to 700&deg; C.

Zirconium-doped BST materials and MOCVD process forming same

A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100&deg; C. to about 300&deg; C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N,O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400&deg; C. to about 1200&deg; C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors.

Liquid delivery MOCVD process for deposition of high frequency dielectric materials

An MOCVD precursor composition useful for MOCVD formation of a non-linear optically active metal borate thin film, comprising: (I) an organometallic source reagent for a metal reactively forming a non-linear optically active metal borate, and (II) an organoborate compound of the formula: B(OR).sub.3, wherein each R is independently selected from H, alkyl, aryl, alkaryl, arylalkyl, alkenyl, fluoroalkyl, fluoroaryl, fluoroaralkyl, fluoroalkaryl, trialkylsilyl, and C.sub.5 -C.sub.8 carbocylic groups, as the aforementioned borate source reagent. Such composition may be employed for forming a non-linear optically active metal borate thin film on a substrate, via depositing by CVD on said substrate a metal from the organometallic source reagent and a borate from the organoborate compound, to react the metal with the borate and yield the non-linear optically active metal borate on the substrate. Non-linear optically active devices, such as data storage devices, laser printers, display panels, and communications devices, can be fabricated using the composition and method of the invention.

Source reagents for MOCVD formation of non-linear optically active metal

Ba--Sr--Ti-oxide dielectric material, with at least 60 atomic percent of the total content of the oxide being Ti, can have relatively high dielectric constant K (&gt;40 at 20.degree. C.) and relatively low second order voltage coefficient a.sub.2 of the dielectric constant (a.sub.2 &lt;100 PPM V.sup.2 at 20.degree. C.). In preferred embodiments the dielectric material has nominal composition (BA.sub.x Sr.sub.y Ti.sub.1--x--y)-oxide, with 1--x--y in the range 0.65-0.90, with both x and y greater than or equal to 0.05. Ba, Sr and Ti together typically comprise at least 99 atomic percent of the total metal content of the dielectric material.

Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide

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Branchburg, NJ, United States of America

Gregory T Stauf