Hewlett-packard Development Company, L.p.

Oregon State University

Sharp Laboratories of America, Inc

Eveready Battery Company, Inc.

Gregory Scott Herman

Peter Mardilovich

David A Champion

Randy Hoffman

James O'Neil

David Punsalan

Chih-hung Chang

Laura Kramer

Christopher C Beatty

Daniel A Kearl

Apostolos T Voutsas

Jer-shen Maa

Kurt M Ulmer

Douglas A Keszler

Jeremy T Anderson

Benjamin L Clark

Richard Budd Peterson

Chinmay Suresh Betrabet

Brian Kevin Paul

Dennis M Lazaroff

Niranjan Thirukkovalur

J Daniel Smith

Ki-Joong Kim

Eric Bradley Hostetler

Yu-Jen Chang

Brendan Thomas Flynn

Doo-Hyoung Lee

Mark W Hoskins

Richard Paul Oleksak

Daniel Alan Peterson

Alexander N Govyadinov

Zhizhang Chen

Sriram Ramamoorthi

Joseph W Tsang

David M Schut

Neal W Meyer

John M Koegler, Iii

Tsuyoshi Yamashita

Ronald L Enck

Kanan P Puntambekar

Garry Dale Hinch

James E Ellenson

Hubert A Vander Plas

Luanne J Rolly

Ted W Barnes

Tom Etheridge

Sven Moller

David Blessing

David L Neiman

Padmavathi Chandran

Bob C Fitzmorris

Gustavo Henrique Albuquerque

Darin Peterson

Martin Joseph Manning

Peter Mardllovich

Systems and methods for synthesizing nanocrystals using continuous, microwave-assisted, segmented flow reactor.

Continuous microwave-assisted segmented flow reactor for high-quality nanocrystal synthesis

Systems and methods for synthesizing high-quality nanocrystals via segmented, continuous flow microwave-assisted reactor were developed.

A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Semiconductor film composition

In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

Semiconductor devices and methods of making

A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.

Microelectronic device

A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Method of making a semiconductor device having a multicomponent oxide

Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

Multilayer device with organic and inorganic dielectric material

A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer overlying the substrate. Source/drain (S/D) regions are formed in contact with the active MOS layer. A channel region is interposed between the S/D regions. The TFT includes a gate electrode, and a gate dielectric interposed between the channel region and the gate electrode. The active MOS layer may be ZnOx, InOx, GaOx, SnOx, or combinations of the above-mentioned materials. The active MOS layer also includes a primary dopant such as H, K, Sc, La, Mo, Bi, Ce, Pr, Nd, Sm, Dy, or combinations of the above-mentioned dopants. The active MOS layer may also include a secondary dopant.

Metal oxide semiconductor thin film transistors

A solution process is provided for forming a textured transparent conductive oxide (TCO) film. The process provides a substrate, and forms a first layer on the substrate of metal oxide nanoparticles such as ZnO, InO, or SnO. The metal oxide nanoparticles have a faceted structure with an average size greater than 100 nanometers (nm). Voids between the metal oxide nanoparticles have a size about equal to the size of the metal oxide nanoparticles. Then, a second layer is formed overlaying the first layer, filling the voids between the nanoparticles of the first layer, and completely covering the substrate. The result is a continuous TCO film having an average surface roughness that is created by the combination of first and second layers.

Solution process for fabricating a textured transparent conductive oxide (TCO)

One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula ABOwherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Semiconductor device with multiple component oxide channel

Semiconductor device having a metal oxide channel

A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.

Making a structure

Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.

Method of forming a component having dielectric sub-layers

A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.

Multilayer dielectric defect method

A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion () disposed on the plurality of circuit components, and a patterned passivation dielectric () selectively disposed on the unpatterned channel portion () to electrically pattern an active region of the unpatterned channel portion ().

System and method for manufacturing a thin-film device

Growing community of inventors

Albany, OR, United States of America

Gregory Scott Herman