Dow Corning Corporation

Other

Gregory Scott Becker

Eric S Moyer

Russell Keith King

Brian Harkness

Craig Rollin Yeakle

Geoffrey Bruce Gardner

Leslie Earl Carpenter, Ii

Tetsuyuki Michino

Sheng Wang

John Albaugh

Sina Maghsoodi

Satyendra Kumar Sarmah

Louise Ann Malenfant

Louise Malenfant

Satyendra Sarmah

This invention relates to acrylic functional resin compositions. More particularly, this invention relates to Poly [organ-co-(meth)acryloxyorgano]silsequioxane resins that are curable upon exposure to ultraviolet radiation with photo initiator or upon heating with or without a free radical generator. The resin compositions have high storage stability at room temperature and produces films that are useful as planarization layer, interlayer dielectric, passivation layer, gas permeable layer, negative photoresist, antireflective coating, conformal coating and IC packaging.

Radiation sensitive silicone resin composition

A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer; and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and abase.

Method for forming and removing a patterned silicone film

A semiconductor package comprising a wafer having an active surface comprising at least one integrated circuit, wherein each integrated circuit has a plurality of bond pads; and a cured silicone layer covering the surface of the wafer, provided at least a portion of each bond pad is not covered with the silicone layer and wherein the silicone layer is prepare by the method of the invention.

Semiconductor package and method of preparing same

A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of organosulfates described by formula R SO H and alkali metal salts thereof, where R is selected from the group consisting of alkyl groups comprising about 4 to 16 carbon atoms and alkylphenyl groups comprising 7 to about 22 carbon atoms.

Process for synthesis of silicone resin

A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of alkylsulphonic acid hydrate, alkali metal salt of alkylsulphonic acid, arysulphonic acid hydrate, and alkali metal salt of arylsulphonic acid.

Silicone resins and process for synthesis

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Sanford, MI, United States of America

Gregory Scott Becker