Soitec

Gregory Riou

Didier Landru

Ionut Radu

Marcel Broekaart

Gweltaz Gaudin

Arnaud Castex

Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in &#x3bc;m) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

Method for producing composite structure with metal/metal bonding

Temporary substrates may include a bonding surface prepared for receiving an additional substrate that will transfer a thin layer. Such substrates may include a principal part or support and a surface layer thereon with the surface layer having a plurality of inserts therein. The inserts are made of a material having a coefficient of thermal expansion that is significantly different from that of the material constituting the surface layer. Processing methods for transferring a selected portion of an original substrate may involve such temporary substrates and productions methods may produce such temporary substrates.

Temporary substrate, transfer method and production method

A method for manufacturing components on a mixed substrate. The method comprises the following steps: providing a substrate of the semiconductor-on-insulator (SeOI) type comprising a buried oxide layer between a supporting substrate and a thin layer, forming in this substrate a plurality of trenches opening out at a free surface of the thin layer and extending over a depth such that each trench passes through the thin layer and the buried oxide layer, these primary trenches delimiting at least one island of the SeOI substrate, forming a mask inside the primary trenches and as a layer covering the areas of the free surface of the thin layer located outside the islands, proceeding with heat treatment for dissolving the buried oxide layer present at the island, so as to reduce the thickness thereof.

Method for manufacturing components

A process for treating a semiconductor-on-insulator structure that has, in succession, a support substrate, a layer of an oxide or oxynitride of a semiconductor material, and a thin semiconductor layer of the semiconductor material. The process includes providing, on the surface of the thin layer, a mask defining exposed regions of the thin layer; providing a layer of nitride or oxynitride of the semiconductor material on the exposed regions of the thin layer; and applying a heat treatment causing at least some of the oxygen in the oxide or oxynitride layer to diffuse through the exposed regions. The nitride or oxynitride layer is provided at a thickness sufficient to provide a ratio of the rate of oxygen diffusion though the exposed regions to that through the regions covered with the mask that is greater than 2.

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Crolles, France

Gregory Riou