International Business Machines Corporation

Jsr Corporation

Central Glass Company, Limited

Other

Volkswagen Ag

Jsr Micro Inc.

Gregory Michael Wallraff

Robert David Allen

Phillip Joe Brock

Ratnam Sooriyakumaran

Carl Eric Larson

Richard Anthony DiPietro

Robert Dennis Miller

Hoa D Truong

William Dinan Hinsberg

Linda Karin Sundberg

Ho-Cheol Kim

Gregory Breyta

David Robert Medeiros

Hiroshi Ito

Sally Ann Swanson

William D Hinsberg, Iii

Donald Clifford Hofer

Logan L Simpson

Dirk Pfeiffer

David John Russell

Daniel Sanders

Mark Whitney Hart

Daniel Joseph Dawson

Donald Herman Glatzel

Richard Allen Day

Bryan D McCloskey

Ramakrishnan Ayothi

John R Mertz

Debra Fenzel-Alexander

Takashi Mori

Wu-Song S Huang

Willi Volksen

Satoru Narizuka

Richard Anthony Dipietro

Dennis R McKean

Scott Arthur MacDonald

Carlton G Willson

Luisa Dominica Bozano

Robert J Twieg

Dario Gil

Jeffrey W Labadie

Thomas Ingolf Wallow

Mark Edwin Baier

Seok J Kang

Glenn H McGall

Wayne Martin Moreau

Dario Leonardo Goldfarb

Young-Hye Na

Joy Cheng

Eric F Connor

Yukio Nishimura

Hsinyu Tsai

Burton Jesse Carpenter

Victor Yee-Way Lee

Arpan Pravin Mahorowala

Frances Anne Houle

Steven Erik Steen

William R Brunsvold

Hubert Schlosser

John Allen Hoffnagle

Raman Gobichettipalayam Viswanathan

Sharee Jane McNab

Josef Michl

Joseph LaTorre

Michael G McMaster

Melvin W Montgomery

John David Bass

Qing Song

Angela-Kristina Speidel

Thomas I Wallow

Rouven Scheffler

Benjamin Madon

Robert Allen David

Brian Peter Hughes

M A Mueed

Dolores Carlotta Miller

Robert J Tweig

Libor Vycklicky

Bill Hinsberg

Hoa Trung

Shiro Kusumoto

Vincent Ouazan-Reboul

Mark Steven Slezak

Forming a hardmask layer for reactive ion etching includes depositing a hardmask above an underlayer. The hardmask includes a layer of magnesium oxide having a thickness of up to 10 nm. A resist layer is deposited above the hardmask and developed to form a pattern that exposes portions of the hardmask. The pattern is transferred from the resist layer to the hardmask by rinsing exposed portions of the hardmask with a deionized water solution.

Magnesium oxide based hardmask for reactive ion etching

A battery employing lithium-oxygen chemistry may include an anode comprising lithium, an electrolyte, and a porous cathode. The electrolyte may include a lithium-containing salt; a partially fluorinated ether, such as 2,2-bis(trifluoromethyl)-1,3-dioxolane; and a co-solvent selected from the group consisting of ethers, amides, nitriles, and combinations thereof. In some examples, the electrolyte does not include a cyclic carbonate ester, a sulfolane, or a sulfolane derivative. The porous cathode allows oxygen to come into contact with the electrolyte.

Lithium oxygen battery and electrolyte composition

Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists

A lithium-oxygen battery may include an anode, a cathode, and an electrolyte between, and in contact with, the anode and the cathode. The anode may include lithium and/or a lithium alloy. In some examples, the cathode defines a surface that is predominantly metal oxide with an electron conductivity of at least 10Siemens per centimeter. In some examples, the cathode defines a surface in contact with oxygen, and includes ruthenium oxide. In some examples, the cathode defines a surface that is substantially covered by ruthenium oxide and is in contact with oxygen.

Cathode material for lithium&#x2014;oxygen battery

A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites. One-step simultaneous base treatment and solvent development employs a composition comprising a mix of the basic compound and solvent developer.

Resist performance for the negative tone develop organic development process

Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.

Self-topcoating resist for photolithography

Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties.

Positive tone organic solvent developed chemically amplified resist

A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.

Methods of directed self-assembly and layered structures formed therefrom

Compositions are disclosed having the formula (3):[C'][Ta(O)(L&#x2032;)]&#x2003;&#x2003;(3),wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O)(L&#x2032;)has a charge of 0 to &#x2212;3, C&#x2032; is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L&#x2032; is an oxidatively stable organic ligand having a charge of 0 to &#x2212;4, and L&#x2032; comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.

Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications

Provided are novel symmetrical and asymmetrical bifunctional photodecomposable bases (PDBs) with dicarboxylate anion groups that show increased imaging performance. Also provided are photoresist compositions prepared with the bifunctional dicarboxylated PDBs and lithography methods that use the photoresist compositions of the present invention.

Photodecomposable bases and photoresist compositions

Lithographic patterning methods involve the formation of a (one or more) metal oxide capping layer, which is rinsed with an aqueous alkaline solution as part of the method. The rinse solution does not damage the capping layer, but rather allows for lithographic processing without thinning the capping layer or introducing defects into it. Ammoniated water is a preferred rinse solution, which advantageously leaves behind no nonvolatile residue.

Alkaline rinse agents for use in lithographic patterning

Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.

Self-topcoating photoresist for photolithography

Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals 'R' and 'Y' represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

Bleachable materials for lithography

A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 &#x212b;/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Immersion topcoat materials with improved performance

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Morgan Hill, CA, United States of America

Gregory Michael Wallraff