International Business Machines Corporation

Other

Stmicroelectronics Gmbh

The Carborundum Company

Gregory M Johnson

Benjamin V Fasano

Subhash Laxman Shinde

Lester W Herron

Robert Hannon

David B Goland

Andrew Michael Reitter

Carla Natalia Cordero

Jon Alfred Casey

Rao Venkateswara Vallabhaneni

David Clifford Long

Niranjan Mohanlal Patel

Jonathan H Harris

Richard A Bates

Lisa M Studzinski

Robert A Youngman

Johnathan Stephen Fish

Kevin M Prettyman

Scott R Dwyer

Shenzhi Yang

Balasingham Bahierathan

Christopher B D'Aleo

Raschid Jose Bezama

Mark J LaPlante

Robert Anthony Rita

Lannie R Bolde

James G Balz

David Charles Olson

Michael A Cohn

Muthukumarasamy Karthikeyan

Nancy A Wier-Cavalieri

Muthukumaraamy Karthikeyan

James Hennekens

Via chain and serpentine/comb test structures are in kerf areas of a wafer. The via chain test structures comprise a first via chain and a second via chain in a first kerf area. The via chain test structures are formed such that geometrically shaped portions of the first via chain and geometrically shaped portions of the second via chain alternate along the length of the first kerf area.

Via chains for defect localization

Disclosed herein is a fluid coupling system and method. The system may include a supply bladder, a discharge bladder, and a ball valve. The supply bladder having a supply inflation portion, the supply housing having a supply inflation passage that provides fluid communication between a central fluid passage and the supply inflation portion, the discharge bladder having a discharge inflation portion, and the ball valve secured in the supply housing or the discharge housing, wherein the discharge inflation portion may be placed in fluid communication with the central fluid passage by twisting the supply housing while the discharge housing remains stationary, and wherein the ball valve may block the central fluid passage while in a first position and may open a fluid passage through the supply housing and the discharge housing while in a second position.

Pneumatic coupling system and method

Method form via chain and serpentine/comb test structures in kerf areas of a wafer. The via chain test structures comprise a first via chain and a second via chain in a first kerf area. The via chain test structures are formed such that geometrically shaped portions of the first via chain and geometrically shaped portions of the second via chain alternate along the length of the first kerf area. The methods perform relatively low (first) magnification testing to identify a defective geometrically shaped portion that contains a defective via structure. The methods then perform relatively high (second) magnification testing only within the defective geometrically shaped portion. The first magnification testing is performed at a lower magnification relative to the second magnification testing.

Preferred embodiments for methods of removing an integrated circuit (&ldquo;IC&rdquo;) from a substrate, where the IC is attached to the substrate by multiple solder connections are disclosed. One preferred embodiment of the inventive methods provides the steps of heating the IC and substrate to the reflow temperature for the solder connections and pulling the IC from the substrate by means of a vacuum force. Another preferred embodiment of the inventive method provides the step of shearing the IC from the substrate after the substrate and IC are heated, but before solder reflow temperature has been reached, and where the shearing force may be programmed through a computer controlled servomotor. Preferred embodiments of certain apparatus applying the inventive methods for removing an integrated circuit from a substrate are also disclosed. One preferred embodiment of the inventive apparatus includes a vented pallet to hold the substrate and IC and through which the vacuum force is applied to pull the IC from the substrate without the use of physical clamping or contact forces applied to the substrate or IC. In a further preferred embodiment of the inventive apparatus, shear elements are provided and used with a programmable servomotor for precisely controlling the forces applied to the substrate and IC as a function of time, temperature and translational distance.

Method and apparatus for removing known good die

Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.

Method for the controlling of certain second phases in aluminum nitride

Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste or may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. a liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.

Thermoelectric devices and methods for making the same

Method for controlling of certain second phases in aluminum nitride

Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods are employed for forming tunnels through lamination and etching. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.

Metal pastes used in the fabrication of multilayer ceramic (MLC) substrates used in semiconductor devices. The pastes reduce substrate defects, such as via bulge and camber. The pastes are comprised of a metal having high conductivity, frit which includes glass, an organic binder, and a solvent, optionally with a surfactant.

Pastes for improved substrate dimensional control

A method and apparatus for flattening a ceramic body comprised primarily of an aluminum nitride system having a liquid phase additive necessary for low temperature sintering during a firing thereof is disclosed. The ceramic body is referred to as an aluminum nitride multilayer ceramic (AlN MLC). The method and apparatus include a support tile having a first coating on a contact surface thereof, the AlN MLC for being placed upon the contact surface of the support tile. A load flattening tile having a second coating on a contact surface thereof is provided, the load flattening tile for being placed with its coated surface upon and in contact with the AlN MLC. Lastly, a furnace is provided for heating the support tile, AlN MLC, and load flattening tile at temperatures greater than 1500.degree. C. for an amount of time necessary to flatten the ceramic body to a desired degree of flatness, wherein the first coating and the second coating of the support tile and the load flattening tile, respectively, react with the AlN MLC for quenching the liquid phase of the ceramic body to prevent a sticking of the support tile and the load flattening tile to the AlN MLC during a flattening process.

Method for flat firing aluminum nitride/tungsten electronic modules

A single furnace loading cycle method for sintering at least one product comprises placing at least one product into a ventable/sealable box, and placing the box within the furnace. The box is vented inside the furnace at a first temperature range and the product is sealed inside the box in a second temperature range, wherein the second temperature range is higher than the first temperature range. The box includes a closeable top cover and a control means that comprises a first set of collapsible spacers which hold open the cover at temperatures below the first temperature range and collapse to lower the cover into sealing engagement with the box at temperatures above the first temperature range. The box further comprises a substrate to be sintered with a lower and an upper setter on opposite sides of the substrate. The substrate rests on the lower setter, and a second set of collapsible spacers rest on the lower setter and have heights sufficient to lift the upper setter above the height of the substrate, and wherein the second set of spacers collapse to lower the upper setter to rest upon the substrate at temperatures above the first temperature range.

Method for in-situ environment sensitive sealing and/or product

Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Aluminum nitride body having graded metallurgy

A single furnace loading cycle technique and a ventable sintering box therefor are disclosed for the sintering of products, such as, ceramic substrates. The sintering box includes a closeable cover which is held open by collapsible or deformable or sensitive spacers in a first furnace temperature range. The sensitive spacers collapse or deform in a higher temperature range to seal closed the box and the substrates therein. Thus, volatile agents within the substrates are permitted to escape in the first temperature range but are prevented from escaping in the higher temperature range. Provision also is made using additional sensitive spacers for applying a weight upon the substrates when in the higher temperature range due to the collapse or deformation of the sensitive spacers.

Apparatus for in situ environment sensitive sealing and/or product

Growing community of inventors

Poughkeepsie, NY, United States of America

Gregory M Johnson