International Business Machines Corporation

The Charles Stark Draper Laboratory, Inc.

The Johns Hopkins University

Lawrence Livermore National Security, LLC

Elpis Technologies Inc.

Gregory M Fritz

Kenneth Parker Rodbell

Cyril Cabral, Jr

Eric Andrew Joseph

Hiroyuki Miyazoe

Robert L Bruce

Eric Peter Lewandowski

Conal Eugene Murray

Michael S Gordon

Dirk Pfeiffer

Stephen McConnell Gates

Rebecca Ann DeFronzo

Ghavam G Shahidi

Paul Stephen Andry

Fuad Elias Doany

Thomas M Shaw

Xiao Hu Liu

Terry Allen Spooner

Willi Volksen

Teddie Peregrino Magbitang

Michael F Lofaro

Qiang Huang

Yu Luo

Timothy P Weihs

Geraud J Dubois

Stephen L Bellio

William Whitcomb McFarland

Jesse M Carr

Sean George

Glenn Richard Thoren

Sara Barron

Jeffery Brandon DeLisio

Ali Khakifirooz

Bahman Hekmatshoartabari

Chung H Lam

Daniel C Edelstein

Davood Shahrjerdi

Christian Lavoie

Bing Dang

Jack Oon Chu

Bucknell Chapman Webb

Jeffrey T Borenstein

Robert L Wisnieff

Harold John Hovel

Steven Lorenz Wright

Alexander E Gash

Jonathan Robert Coppeta

Young-Hee Kim

Brett C Isenberg

Joana S B T Maria

John S Sze

Kenneth P Vandevoordt

Robert Allen Knepper

Justin A Grzyb

A tail for a projectile includes a body having a longitudinal axis. A steering assembly is secured to the body. The steering assembly includes a flap movable from a first position in which the flap does not extend radially beyond the body to a second position in which the flap extends radially beyond the body and at an angle relative to the longitudinal axis, and a flap release mechanism. A projectile including a tail according to the present disclosure is also provided.

Deployable flap for high-G maneuvers

A digital biomedical device includes a substrate forming a cavity, a seal formed around the cavity, a lid coupled to the substrate by the seal, a reactive metal structure comprising a plurality of metal layers, wherein the reactive metal structure is a component of at least one of the substrate and the lid, a metal trace configured to initiate a self-propagating reaction between the plurality of metal layers of the reactive metal structure and release contents of the cavity, and a power supply configured to apply an electric current to the metal trace.

Delivery device including reactive material for programmable discrete delivery of a substance

The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask.

Thin film interconnects with large grains

A method of providing an anode composed of a homogeneous solid metallic alloy is provided. The alloy includes 100 ppm to 1000 ppm Bi, 100 ppm to 1000 ppm In, and Zn. The method includes fabricating a cathode in a first cavity in a first dielectric element. The method further includes fabricating an anode in a second cavity in a second dielectric element. The method further includes joining the cathode and the anode in a complanate manner.

Method of forming a homogeneous solid metallic anode for a thin film microbattery

An electronic circuit is made by selectively depositing an electrically conductive material seed layer conformally upon a three-dimensional substrate via the plurality of apertures of a three-dimensional mask. The substrate is then plated with more of the same electrically conductive material, or a different electrically conductive material, on the seed layer. In the case of electroplating, a nonconductive support structure is incorporated into a conductive clamp for making electrical connection to the seed layer. An environmentally protective layer may be deposited upon the electrically conductive material to such an extent that the electronic circuit remains solderable. The three-dimensional mask may be fabricated by an additive manufacturing technique.

Method for manufacturing three-dimensional electronic circuit

Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Activating reactions in integrated circuits through electrical discharge

A destroy on-demand electrical device includes a substrate layer formed using a soluble material (e.g., a Germanium oxide), a semi-conductor layer formed from a material that can become soluble upon further processing (e.g., Germanium) and conductive elements, formed from a metallic material such as Copper. The device is coupled with one or more disintegration sources that contain disintegration agents (e.g., Hydrogen Peroxide) that can promote disintegration of the device. The device can be destroyed in response to actuation of the disintegration sources, for example by actuation of a source that produces Hydrogen Peroxide for use in oxidizing the semi-conductor layer. Water can be used to dissolve dissolvable substrate layers. The semi-conductor layer can be destroyed by first processing this layer to form a dissolvable material and dissolving the processed layer with water. The remaining Copper components disintegrate once their underlying layer have been dissolved and/or by use of a salt.

Method and apparatus for a destroy on-demand electrical device

An ink contains particles containing metal that reacts during sintering to produce an electrically conductive line or area having a diffusivity that is less than the diffusivity of the metal before the reaction. Resulting electronic circuits therefore exhibit longer useful lives, compared to conventionally inkjet printed circuits.

Reactively assisted ink for printed electronic circuits

In one example, a method for fabricating an integrated circuit includes patterning a layer of a first conductive metal, via a subtractive etch process, to form a plurality of lines for connecting semiconductor devices on the integrated circuit. A large feature area is formed outside of the plurality of conductive lines via a metal fill process using a second conductive metal.

Hybrid subtractive etch/metal fill process for fabricating interconnects

An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids.

Articles including ultra low dielectric layers

A reactive material stack with tunable ignition temperatures is provided by inserting a barrier layer between layers of reactive materials. The barrier layer prevents the interdiffusion of the reactive materials, thus a reaction between reactive materials only occurs at an elevated ignition temperature when a certain energy threshold is reached.

Energy release using tunable reactive materials

Growing community of inventors

Yorktown Heights, NY, United States of America

Gregory M Fritz