Koninklijke Philips Corporation N.V.

Gregory Lee Kreider

Hermanus L Peek

Wilco Klaassens

The image sensor comprises a semiconductor body ( ) having gate electrodes ( ) at a surface ( ), each gate electrode being combined with the semiconductor body ( ) and an intermediate dielectric ( ) so as to form a MOS capacitor ( ), which gate electrodes ( ) include a portion ( ) which is thinner than a surrounding zone ( ), a photosensitive region ( ) in the semiconductor body ( ) being situated below each gate electrode ( ), said photosensitive region ( ) being capable of absorbing electromagnetic radiation and converting said radiation to electric charge. The MOS capacitors ( ) are arranged next to each other so as to form an array ( ), with the gate electrodes ( ) in a row ( ) electrically contacting each other, and the gate electrodes ( ) in a column ( ) being mutually separated only by electrically insulating material ( ). The image sensor has an improved photosensitivity, particularly for electromagnetic radiation with a short wavelength.

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Eindhoven, Netherlands

Gregory Lee Kreider