Intersil Americas Inc.

Analog Devices,inc.

Texas Instruments Corporation

Gregory Keith Cestra

Alexander Kalnitsky

Joy T Jones

Dong Zheng

Xijian Lin

Derek F Bowers

Andrew Derek Strachan

Craig Wilson

Phillip J Benzel

Michael Thomas Dunbar

Michael Lee

Steven Wright

Philip Judge

Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a plurality of resistor unit cells arranged in an array, each resistor unit cell formed within the semiconductor substrate and including a top contact. A conductive layer located over the semiconductor substrate electrically connects to a subset of the top contacts.

Vertically-constructed, temperature-sensing resistors and methods of making the same

Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a first doped region, a second doped region, and a third doped region between the first and second doped regions, the third doped region including a temperature sensitive semiconductor material; a first contact coupled to the first doped region; a second contact opposite the first contact coupled to the second doped region; and an isolation trench to circumscribe the third doped region.

Described herein are light sensors that primarily respond to visible light while suppressing infrared light. Also described herein are systems the incorporate such light sensors. Such a system can include a display, a light source to backlight the display and a controller to control the brightness of the light source based on feedback received from such light sensors. Described herein are also methods for controlling backlighting.

Backlight control using light sensors with infrared suppression

Embodiments of the present invention are directed to light sensors that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

Light sensors with infrared suppression

Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

A semiconductor device interconnection contact and fabrication method comprises fabricating one or more active devices on a semiconductor substrate. A diffusion barrier layer is deposited over the devices, followed by an Al-based metallization layer. The diffusion barrier and metallization layers are masked and etched to define interconnection traces. Mask and etch steps are then performed to remove interconnection trace metallization that is in close proximity to the active device regions, while leaving the traces' diffusion barrier layer intact to provide conductive paths to the devices, thereby reducing metallization-induced mechanical stress which might otherwise cause device instability.

Semiconductor device interconnection contact and fabrication method

A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a &#x3c1; of at least 0.02 &#x3a9;-cm (typically 0.02-1.0 &#x3a9;-cm), and a TCR of less than &#xb1;1000 ppm/&#xb0; C. (typically less than &#xb1;300 ppm/&#xb0; C.). A sheet resistance of at least 20 k&#x3a9;/&#x25a1; may also be obtained. The resulting thin film is preferably at least 200thick, to reduce surface scattering conduction currents.

High resistivity thin film composition and fabrication method

The present invention provides a JFET which receives an additional implant during fabrication, which extends its drain region towards its source region, and/or its source region towards its drain region. The implant reduces the magnitude of the e-field that would otherwise arise at the drain/channel (and/or source/channel) junction for a given drain and/or source voltage, thereby reducing the severity of the gate current and breakdown problems associated with the e-field. The JFET's gate layer is preferably sized to have a width which provides respective gaps between the gate layer's lateral boundaries and the drain and/or source regions for each implant, with each implant implanted in a respective gap.

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Pleasanton, CA, United States of America

Gregory Keith Cestra