Applied Materials, Inc.

Semitool, Inc.

Gregory J Wilson

Paul R McHugh

Kyle Moran Hanson

Daniel J Woodruff

Thomas Lee Ritzdorf

Nolan Layne Zimmerman

Robert Allen Weaver

Eric J Bergman

John Lee Klocke

Steve L Eudy

Randy Harris

Deepak Saagar Kalaikadal

Paul Van Valkenburg

Steven L Peace

Adam Marc McClure

Viachslav Babayan

Linlin Chen

Erik Lund

James J Erickson

Mikael R Borjesson

Michael Windham

Tsutomu Tanaka

Roey Shaviv

Guan Huei See

Paul Zachary Wirth

Dmitry A Dzilno

Jared Ahmad Lee

Karthik Ramanathan

Robert B Moore

Ying W Wang

Jason A Rye

Tricia A Youngbull

Charles Sharbono

Kwan Wook Roh

Rakesh Ramadas

Timothy G Stolt

Sriharish Srinivasan

Nigel Stewart

Eric Andrew Englhardt

Kevin Griffin

Robert W Batz, Jr

Mario Dave Silvetti

Joseph Grover Gordon, Ii

John M Pedersen

Marvin L Bernt

Kenneth Brian Doering

Richard W Plavidal

Rajesh Baskaran

Curt T Dundas

Brian Aegerter

Daniel P Bexten

Daniel L Durado

Jeffrey I Turner

Vincent Steffan Francischetti

Sam Lee

David Silvetti

Stuart Crane

Robert Douglas Mikkola

Balamurugan Ramasamy

Zhongmin Hu

Larry J Funk

Benjamin Clay Bradley

Andrew Anten

Alan J Gotcher

Joseph Antony Jonathan

Curtis A Weber

Tim McGlenn

Timothy A Anderson

Mark P Cleaver

James Jay Tripp

Carl Campbell Stringer

Aaron Paul Juntunen

George Mattinger

Godfrey Sikha

James E Brown

Method and systems for cleaning and wetting a semiconductor substrate, are provided. Methods and systems include forming an atmosphere in a basin housing the semiconductor substrate with a gas having a higher solubility in a wetting agent than oxygen. Methods and systems include spraying the wetting agent with a spray head onto the substrate while maintaining the atmosphere. Methods and systems include rotationally translating the semiconductor substrate, the spray head, or both the semiconductor substrate and the spray head, Methods and systems include wetting a plurality of features defined in the substrate.

Electroplating wetting chamber with reduced bubble entrapment

Heaters having a body with having a top and bottom comprising pyrolytic boron nitride (PBN), a first heater electrode and a second heater electrode are described. The heater electrodes can be enclosed within an electrically insulating standoff and connected to separate busbars to provide power. Heater assemblies including one or more of the heaters and processing chambers including the heater assemblies are also described.

PBN heaters for ALD temperature uniformity

Exemplary electroplating systems may include a vessel. The systems may include a paddle disposed within the vessel. The paddle may be characterized by a first surface and a second surface. The first surface of the paddle may be include a plurality of ribs that extend upward from the first surface. The plurality of ribs may be arranged in a generally parallel manner about the first surface. The paddle may define a plurality of apertures through a thickness of the paddle. Each of the plurality of apertures may have a diameter of less than about 5 mm. The paddle may have an open area of less than about 15%.

Electroplating co-planarity improvement by die shielding

The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

Vertically adjustable plasma source

A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

Parameter adjustment model for semiconductor processing chambers

Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Mechanically-driven oscillating flow agitation

Methods, systems, and apparatus for cleaning and drying a tape-frame substrate are provided. In embodiments, an apparatus for supporting a tape-frame substrate includes a chuck having a first side and a second side opposite the first side, the first side having a convex surface configured to support the tape-frame substrate; and a plurality of channels extending through the chuck and having outlets along the first side, wherein the plurality of channels are configured to dispense fluid from the outlets along the convex surface of the first side. In embodiments, a support system includes the chuck and a holder configured to mount a tape-frame substrate to the chuck. The plurality of channels are configured to dispense fluid from the outlets and between the tape-frame substrate and the convex surface of the chuck when the tape-frame substrate is mounted to the chuck.

Methods, systems, and apparatus for tape-frame substrate cleaning and drying

An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Electroplating system

Exemplary methods of producing a semiconductor substrate may include plating a metal within a plurality of vias on the semiconductor substrate. A target average fill thickness of the metal within the plurality of vias may be between about a thickness equal to an average via radius of the plurality of vias and a thickness twice the average via radius of the plurality of vias. At least one via of the plurality of vias may be filled to a height below the target average fill thickness of the metal. The methods may include heating the metal to cause reflow of the metal within each via of the plurality of vias. The reflow may adjust the metal within the at least one via to increase in height towards the target average fill thickness.

Systems and methods for improving within die co-planarity uniformity

Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.

Substrate cleaning components and methods in a plating system

Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.

Multi-compartment electrochemical replenishment cell

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Kalispell, MT, United States of America

Gregory J Wilson