Harris Corporation

Gregory J Scott

Akira Ito

Glenn A Dejong

Glenn A DeJong

Brian Swagerty

Sahil Saini

A bipolar transistor having an improved collector structure includes a buried region of the same conductivity type as the collector region spaced from the base region and having a laterally graded impurity concentration with the lowest below the center of the emitter .region. An integrated circuit may include transistors having the buried collector region of the diminishing lateral impurity concentration below the center of its emitter as well as having transistors with a uniform lateral impurity concentration below the total lateral extent of the emitter. A method of achieving the unique collector region includes forming at least a first collector region of a first conductivity type as two lateral portions of substantially uniform lateral impurity concentration with a space therebetween in a substrate of a second conductivity type and heating to form the buried collector structure of diminishing lateral impurity concentration. This is followed by forming a collector layer on the substrate, forming a base region in the collector region and an emitter region in the base region over the space in the buried collector region. If the integrated circuit includes transistors which do not have the unique graded collector, the buried collector region for these transistors is formed by introducing impurities having substantially uniform lateral impurity concentration in the substrate.

Method of making an improved graded collector for inductive loads

A bipolar transistor having an improved collector structure includes a buried region of the same conductivity type as the collector region spaced from the base region and having a laterally graded impurity concentration with the lowest below the center of the emitter region. An integrated circuit may include transistors having the buried collector region of the diminishing lateral impurity concentration below the center of its emitter as well as having transistors with a uniform lateral impurity concentration below the total lateral extent of the emitter. A method of achieving the unique collector region includes forming at least a first collector region of a first conductivity type as two lateral portions of substantially uniform lateral impurity concentration with a space therebetween in a substrate of a second conductivity type and heating to form the buried collector struture of diminishing lateral impurity concentration. This is followed by forming a collector layer on the substrate, forming a base region in the collector region and an emitter region in the base region over the space in the buried collector region. If the integrated circuit includes transistors which do not have the unique graded collector, the buried collector region for these transistors is formed by introducing impurities having substantially uniform lateral impurity concentration in the substrate.

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Pocatello, ID, United States of America

Gregory J Scott