Massachusetts Institute of Technology

Gregory J Dunn

Thomas W Eagar

Terance B Blake

Joseph G Kaiser

Holly L Francois

Peter A Lin

A method of fabricating a field-effect device having a gate dielectric of reoxidized nitrided oxide (RNO) provides an inversion layer mobility much higher than that of conventional RNO devices. A conductivity structure such as a metal oxide semiconductor field-effect transistor (MOSFET) is formed in a semiconductor substrate and provided with a gate dielectric of RNO. The formation of the device may or may not make use of rapid thermal processing techniques. Once formed, the device is irradiated with ionizing radiation. A voltage potential may be maintained across the gate dielectric during irradiation to further improve the inversion layer mobility. Post-radiation annealing is then performed at a controlled temperature.

Method of making reoxidized nitrided oxide MOSFETs

After measuring the bulk resistance the surface of high strength low alloy steel material is treated to form a high resistance coating on its surface. When resistance welding the material the coating permits weld formation without significant expulsion or excessive electrode force over a wide range of operating conditions.

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Tewksbury, MA, United States of America

Gregory J Dunn