Sperry Corporation

Gregory J Cosimini

David S Lo

Maynard C Paul

George F Nelson

Leslie H Johnson

Ernest J Torok

Lawrence G Zierhut

The memory system incorporates a memory element storing binary digital data in the presence, vel non, of a Y-domain cross-tie. The memory element has a planar contour that is substantially symmetrical about a longitudinal axis and that has edge portions that are nowhere perpendicular or parallel to the longitudinal axis. A stabilizing magnetic field applied perpendicular to the longitudinal axis and in the plane of the memory element forms a first Neel wall along the longitudinal axis and causes the magnetization in the memory element to be formed into first and second domains on opposite sides of the Neel wall. When a writing magnetic field oriented in the plane of the memory element and perpendicular to the longitudinal axis but opposite to the stabilizing magnetic field orientation is coupled to the memory element, there is formed in the memory element a third domain separated from the first and second domains by second and third Neel walls having a join with one end of the first Neel wall. The first, second and third Neel walls form a 'Y'. Because of the nature of this third domain having its magnetization oriented in a direction parallel to the readout current caused to pass through the memory element, it produces a significantly greater difference in the readout signal between the readout of a stored 1 and a stored 0 than that achieved with the prior art cross-tie wall memory element.

Y-domain magnetic memory system

An improved magnetic memory system in which binary data are stored as cross-tie, Bloch-line pairs, which are serially propagated downstream along a cross-tie wall in a magnetizable layer by appropriate drive fields. The magnetizable layer is configured into a data track whose two opposing edges are formed into patterns of asymmetrically shaped edges which form successive narrow portions with wide portions therebetween, and which are formed about the geometric centerline of the data track. The improvement comprises forming a plurality of energy wells along the geometric centerline of the data track and, transverse to the geometric centerline of the data track in the areas of the narrow portions where the cross-ties are stored but not in the areas of the geometric centerline.

Data track for cross tie wall memory system

Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic layer. The system includes a three-level structure comprised of the following superposed layers: a straight-edged current conductive stripline; a serrated-edged thin magnetic layer data track, and a wide-narrow-edged current conductive stripline terminated on one end by a cross-tie, Bloch-line pair generator and on the other end by a cross-tie detector.

Symmetrical memory plane for cross-tie wall memory system

A method of and an apparatus for counting is disclosed. The counter includes a generator of cross-tie, Bloch-line pairs and a shift register of N stages or memory cells along which the cross-tie, Bloch-line pairs are propagated or replicated into a detector. The method includes coupling a series of bipolar push-nucleate replicate signals, each one of which produces a cross-tie, Bloch-line pair in the adjacent downstream memory cell along the shift register. When the shift register is filled, a cross-tie will appear in the detector. This provides an output signal indicating that the N memory cells have been filled by the N replicate signals.

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Saint Paul, MN, United States of America

Gregory J Cosimini