Northrop Grumman Systems Corporation

Gregory Hoke Rowan

Matt Yuji Nishimoto

Mark Kintis

Alan Cherrette

Flavia S Fong

Jeffrey M Yang

Jeffrey Ming-Jer Yang

Patty P Chang-Chien

Yun-Ho Chung

Edward V Koretzky

Juan Rivera

Derrick M Yamauchi

Kelly Tornquist

An apparatus in one example comprises a differential amplifier and a differential mixer. The differential amplifier is configured to receive a multi-octave differential input signal and output an amplified multi-octave differential output signal. The differential amplifier is also configured to substantially reduce second order harmonic distortion of the amplified multi-octave differential output signal through common mode rejection. The differential mixer configured to multiply the amplified multi-octave differential output signal with a local oscillator input signal and output an up-converted sub-octave differential output signal. The multi-octave differential input signal and the up-converted sub-octave differential output signal comprise a substantially same bandwidth.

Multi-octave differential upconverter

Transistor devices are provided configured to operate at frequencies above a typical first cutoff frequency. In one aspect, a method is provided for configuring a transistor device to operate above a first cutoff frequency. The method comprises selecting a desired operating frequency range and a desired output power for a transistor associated with the transistor device, analyzing the effects of phase velocity mismatch on the overall gain of a plurality of different sized transistors, and evaluating the primary and secondary gain regions of the plurality of different sized transistors. The method further comprises selecting a transistor sized to provide the desired output power at or close to the desired operating frequency range based on the analysis of the phase velocity mismatch and the evaluation of the primary and secondary gain regions.

Transistor devices configured to operate above a first cutoff frequency

A reconfigurable circuit and a related method for its use, the circuit including multiple microelectromechanical systems (MEMS) switches connected between selected points in the circuit. The MEMS switches are controlled to select a desired circuit condition, such as an impedance matching condition, and then the switch conditions may be fused permanently. In the context of an impedance matching circuit, the MEMS switches may be used to optimize matching after circuit fabrication or after packaging, thereby allowing optimization even after potentially performance changing events.

Monolithically integrated switchable circuits with MEMS

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Redondo Beach, CA, United States of America

Gregory Hoke Rowan