Rca Inc.

Gregory H Olsen

Michael Ettenberg

Thomas Joseph Zamerowski

Vladimir Sinisa Ban

Frank Z Hawrylo

Henry Kressel

Dan Botez

Ramon Ubaldo Martinelli

Charles Joseph Buiocchi

Alfred V Cafiero

A semiconductor laser includes a body having parallel end faces and a substrate having a ridge in a major surface thereof which extends between the end surfaces, an active layer overlying the ridge and which tapers in thickness from that portion of the active layer which overlies the ridge and a confinement layer overlying the active layer. The invention also includes a method of forming a semiconductor laser which includes a substrate having a ridge thereon. The method includes the steps of coating a portion of a flat surface of the substrate with an etch resistant material, etching the surface with an anisotropic etchant thereby forming a mesa therein, removing the etch resistant material, further etching the substrate to round the mesa to form a ridge and depositing the active and confinement layers over the surface and the ridge.

Semiconductor laser

A light emitting device comprising a first confinement layer, an active layer having a vee-shaped groove therein extending from a surface thereof towards the first confinement layer and a second confinement layer filling the groove and overlying the surface of the active layer. Electrical current flowing in the device flows through the grooved portion of the active region thereby providing confinement of the current and the light beam emitted by the device in the plane of the active layer.

Semiconductor light emitting device

A light emitting device comprises a substrate, a first confining layer overlying the substrate, an active layer overlying the first confining layer, a second confining layer overlying the active layer and a capping layer overlying the second confining layer. The improvement is the interposition of an absorber layer which absorbs light at the wavelength of the emission between the substrate and the first confining layer and a capping layer which absorbs light at the wavelength of the emission. The improved device exhibits an output beam which has a narrow angular intensity pattern in the plane perpendicular to the plane of the layers and to the end surfaces of the device.

Light emitting device

A semiconductor laser diode includes a substrate of indium phosphide of one conductivity type having on a surface thereof an indium phosphide first confinement layer of the same conductivity type followed by an active layer of indium gallium arsenide phosphide and an indium phosphide second confinement layer of the opposite conductivity type. On the second confinement layer is an indium gallium arsenide phosphide capping layer of either conductivity type having a stripe shaped opening therethrough. In the opening in the capping layer is a contact layer of indium gallium arsenide phosphide of the opposite conductivity type. The confinement layers, the active layer and the capping layer are formed by liquid phase epitaxy and the contact layer is formed by vapor phase epitaxy.

Semiconductor laser diode and method of making the same

A III-V quaternary alloy photodiode comprises an n-type III-V binary alloy body; a III-V quaternary alloy layer chosen to have about the same lattice constant as that of said body grown on a major surface of said body; an electrically insulating layer grown on said quaternary alloy layer and having an opening therein extending through said second layer; a p-type layer of the same III-V binary alloy as said body, grown on said quaternary alloy layer in the area contiguous with the opening in said electrically insulating layer; a p-type region in said quaternary alloy layer in the region contiguous with the opening in said electrically insulating layer; and electrically conducting layers overlying a portion of said p-type binary alloy layer and of a second major surface of said body to provide electrical contact to the photodiode. The III-V quaternary alloy layer may be of n-type conductivity, electrically insulating, or have n-type and electrically insulating regions.

III-V Quaternary alloy photodiode

An aluminum flux method of preparing binary, ternary, and quaternary single crystal metal hexaborides. The single crystals are prepared by mixing a metal oxide, carbonate, or nitrate compound with boron powder in an amount of aluminum which will solubilize the boron at a reaction temperature of from about 1200.degree. C. to about 1600.degree. C. The mixture is held at the reaction temperature for a sufficient time to form the desired single crystal hexaboride.

Single-crystal hexaborides and method of preparation

A new low cost high efficiency gallium arsenide homojunction solar cell incorporating a passivating surface layer of indium gallium phosphide. The thickness of the indium gallium phosphide layer is selected so that it is transmissive to photons having wavelengths shorter than its bandgap energy.

Low cost high efficiency gallium arsenide homojunction solar cell

In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Vapor phase growth technique of III-V compounds utilizing a preheating

A thin coating of carbon is used as a mask to define regions of a crystalline material of the group III-V compounds. A carbon mask is coated on portions of a surface of a substrate and the masked substrate contacted with the group III-V material to deposit the crystalline material only on the portions of the surface of the substrate not covered with the masking coating. The group III-V material will not be deposited on the carbon coating, since it is incapable of nucleating the growth of the crystalline material. Accordingly, a defined region of the crystalline material is formed. The carbon masking coating can also be used as a mask for etching cavities or recesses in a substrate of the group III-V material.

Methods of defining regions of crystalline material of the group III-V

A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

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Dayton, NJ, United States of America

Gregory H Olsen