Broadcom Corporation

Motorola Corporation

Gregory Djaja

Douglas D Smith

Karthik Chandrasekharan

Mark Slamowitz

David William Knebelsberger

Ramamurthy Gorti

Hua-Feng Chen

Douglas W Schucker

James W Nicholes

Frederic B Shapiro

Balaji Narasimham

Stephen W Lai

Timothy J Jennings

Gary Wayne Hancock

Solomon G Meskel

According to an exemplary embodiment, a serializer includes upper and lower shift registers configured to perform a load function where parallel input data is loaded from a parallel input bus and a shift function where the parallel input data is shifted to an output register. The upper shift register is configured to perform the load function while the lower shift register performs the shift function, and the lower shift register is configured to perform the load function while the upper shift register performs the shift function. An output register is configured to alternately receive the parallel input data from the upper shift register and the parallel input data from the lower shift register. The upper and lower shift registers and the output register can comprise scan flip-flops.

Scalable serializer

A hysteresis-based logic element design for improved soft error rate with low area/performance overhead. In one embodiment, a hysteresis inverter block including one or more pairs of inverters can be coupled to a logic element to adjust a switching threshold of the logic element.

Hysteresis-based latch design for improved soft error rate with low area/performance overhead

Single stage and scalable serializer

A disclosed embodiment is a data retention flip flop comprising master and slave circuits that are configured to be turned off when a single sleep mode signal is activated. The disclosed embodiment also comprises an always-on balloon circuit coupled to the master circuit, where the always-on balloon circuit includes a common sub-circuit shared with the master circuit. The master circuit writes into the always-on balloon circuit when the single sleep mode signal is activated, and the master circuit reads from the always-on balloon circuit when the single sleep mode signal is deactivated. The always-on balloon circuits comprises high threshold voltage transistors, while the slave circuit comprises low threshold voltage transistors. The master and slave circuits have no leakage current, or substantially no leakage current, after the single sleep mode signal is activated.

Data retention flip flop for low power applications

A disclosed embodiment is a low leakage data retention flip flop comprising a master circuit for retaining data during sleep mode, wherein the master circuit is configured to receive a reduced supply voltage during the sleep mode. The flip flop includes a slave circuit having low threshold voltage transistors, where the slave circuit is turned off during the sleep mode. In various embodiments, the master circuit might utilize high threshold voltage, standard threshold voltage, or low threshold voltage transistors. Similarly, the slave circuit might utilize high threshold voltage, standard threshold voltage, or low threshold voltage transistors. To begin the sleep mode, the master circuit receives a reduced supply voltage and the slave circuit is coupled to ground and is thus turned off. During the sleep mode, the slave circuit experiences virtually no leakage current, and the master circuit experiences a reduced leakage current.

Low leakage data retention flip flop

The present invention relates to storage element. At least one read port is coupled to the storage element and a sensing device is coupled to the read port, where the read port is coupled to the storage element in an isolated manner. The sensing device is adapted to sense a small voltage swing. The sensing device includes two inverters comprising input offset and gain stages.

Very small swing high performance CMOS static memory (multi-port register file) with power reducing column multiplexing scheme

Devices and methods relating to a multi-port register file memory including a plurality of storage elements in columns are disclosed. The storage elements are arranged in rows and columns and store data. At least one read port is coupled to each of the storage elements and a sensing device is coupled to the read port. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A pair of series transistors coupled together act as the read port while a column mux circuit is coupled to each column and the sensing device. The sensing device includes two inverters comprising input offset and gain stages. An offset device biases the local bitlines at a voltage close to the sense amplifier trip point.

A compilier methodology including a stand alone memory interface which provides a user specified memory device of a required number of words of memory of a required bits per word. The stand alone memory interface is a tool to provide a menu showing multiple ways in which the user's request can be physically configured by varying the number of rows of memory, the number of blocks of memory, and the column multiplexing factor of the memory array. From this menu the user selects the memory configuration that best meets the user's requirements and is provided with either various models or representations (views) of the selected memory configuration or a GDS format data file. The views can be used to design large scale integrated circuits in which the memory device is embedded while the data file is used to generate photo mask for making the memory device as an integrated circuit.

Memory compiler interface and methodology

A CMOS driver (10) with output feedback pre-drive has been provided. The CMOS driver includes first (14) and second (16) output devices for providing drive current at an output (18). The CMOS driver includes an output feedback pre-drive circuit (12) which includes complementary P and N feedback devices (26, 28, 30, 32) that are coupled across the gate and drain electrodes of the output devices and which are controlled by an input signal.

CMOS driver using output feedback pre-drive

A method for optimization of delay times in a digital circuit. The method comprises selecting a logic gate (12), and constructing a model (35) which predicts the delay time (27) of the logic gate (12). Varying the parameters which control the model to more accurately predict the delay time (48). Summing the delay time (48) due to each logic gate (12) which comprises the signal path. Repeating the method for each signal path within the digital circuit until all signal paths are computed. Modifying the digital circuit based on the calculated delay times (48) so as to better satisfy a predetermined measurement criteria.

Growing community of inventors

Phoenix, AZ, United States of America

Gregory Djaja