Silicon Light Machines Corporation

Leland Stanford Junior University

Gm Global Technolgoy Operations, Inc.

Other

Gregory David Miller

Robert L Byer

Martin M Fejer

Janos J Lazar

Lawrence E Myers

Gabriel C Risk

Robert E Steele

Mike Bruner

Ludwig Galambos

Ronald O Miles

Kurt L Jennings

Josef Berger

Robert G Batchko

David Caudillo

Alexei L Alexandrovski

Joseph M McRae

Gisele L Foulon

Michael R Miller

Alexander P Payne

Lawrence Ragan

Ying-Moh Liu

Gary W Green

Mark A Lynn

Vladimir Shur

Laura K Diliello

William H Carpenter

In one embodiment, a ferroelectric material is processed by placing the material in an environment including metal vapor and heating the material to a temperature below the Curie temperature of the material. This allows the bulk conductivity of the ferroelectric material to be increased without substantially degrading its ferroelectric domain properties. In one embodiment, the ferroelectric material comprises lithium tantalate and the metal vapor comprises zinc.

Method for increasing bulk conductivity of a ferroelectric material such as lithium tantalate

One embodiment disclosed relates to a method for sealing an active area of a non-silicon-based device on a wafer. The method includes providing a sacrificial material over at least the active area of the non-silicon-based device, depositing a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing the sacrificial material with a target atmosphere. Another embodiment disclosed relates to a non-silicon-based device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, a contact area, and a lithographically-formed structure sealing at least the active area and leaving at least a portion of the contact area exposed.

Wafer-level seal for non-silicon-based devices

The invention relates to a method of and system for loading information onto a computer in the form of a digital capsule containing information about one of more aspects of a subject, such as products for sale. Preferably, it can then be determined whether the information from the capsule should be updated when the subject is accessed on a user's computer, and, if so, the capsule information can be updated. The capsule is preferably linked to a file containing a representation of the subject and can be exchanged between computers.

Method for transmitting a transferable information packet

Method and apparatus for increasing bulk conductivity of a ferroelectric material

In one embodiment, lithium oxide concentration in wafers is adjusted by placing the wafers in a vessel. Vapor of a lithium oxide source is provided and absorbed by the wafers, thereby adjusting the lithium oxide concentration in the wafers. In another embodiment, a two-phase lithium-rich source is placed between wafers such that space in the process chamber is efficiently utilized. In another embodiment, the wafers to be processed are placed in a section of a process chamber (e.g., process tube). Lithium oxide is introduced on end of the process chamber. Carrier gas is also introduced on that end of the process chamber to carry the lithium oxide into the section of the process chamber where the wafers are located. By adjusting the partial pressure of lithium oxide in the process chamber, the rate at which lithium oxide is absorbed by the wafers is controlled.

Method and apparatus for adjusting lithium oxide concentration in wafers

One embodiment disclosed relates to a method for sealing an active area of a surface acoustic wave (SAW) device on a wafer. The method includes providing a sacrificial material over at least the active area of the SAW device, depositing a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing the sacrificial material with a target atmosphere. Another embodiment disclosed relates to an SAW device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, an electrical contact area, and a lithographically-formed structure sealing at least the active area and leaving at least a portion of the electrical contact area exposed.

Method for sealing an active area of a surface acoustic wave device on a wafer

A fiber optic transceiver capable of bi-directional communication comprises an incoming optical (downlink) signal, a detector comprising a detecting surface configured to detect a detected portion of the incoming optical signal that strikes the detecting surface, and a light modulator for modulating a reflected (uplink) signal. The reflected signal comprises a reflected portion of the incoming signal. The light modulator comprises a controllable reflection member for modulating the reflected signal, and a controller configured to control the controllable reflection member. The controllable reflection member implements micro-electro-mechanical systems (MEMS) technology wherein micro-reflective surfaces are physically positioned or oriented by the control signal, thereby affecting reflection and diffraction in such a way as to modulate the intensity of light entering an uplink channel.

Fiber optic transceiver

An optical switch comprises a substrate, first and second optical waveguide, and first and second conducting elements. The first optical waveguide is coupled to the substrate. The first conducting element is coupled to the first optical waveguide. The second optical waveguide is coupled to the substrate. The second conducting element is coupled to the second optical waveguide. In operation, a first electrical bias applied between the first and second conducting elements causes the first optical waveguide to not optically couple to the second optical waveguide. Further in operation, a second electric bias applied between the first and second conducting elements causes the first optical waveguide to optically couple to the second optical waveguide.

Optical switch

Controlled partial pressure technique for adjusting lithium oxide concentration in wafers

A 2D diffraction grating light valve modulates an incident beam of light. A plurality of elements each have a reflective surface with their respective reflective surfaces substantially coplanar. Alternatively, the reflective surfaces of the plurality of elements lie within one or more parallel planes. The elements are supported in relation to one another. Preferably, a planar member includes a plurality of holes arranged in a symmetrical two-dimensional array and configured such that the holes substantially optically extend the elements. Alternatively, one or more elements substantially optically extends the plurality of holes. The planar member includes a light reflective planar surface that is parallel to the plane of the elements within a functional area of the device. The planar member is supported in relation to the elements. By applying an appropriate biasing voltage to the planar member, the planar member can be moved in a direction normal to the plane of the elements. When the planar member and the plurality of elements are in a first configuration, the 2D diffraction grating reflects the incident beam of light as a plane mirror. When the planar member and the plurality of elements are in a second configuration, the 2D diffraction grating diffract the incident beam of light. Preferably, the planar member is a membrane circumferentially coupled to a support structure.

2-D diffraction grating for substantially eliminating polarization dependent losses

A method for domain patterning of nonlinear ferroelectric materials. The method seeks to reduce the formation of random and spontaneous micro-domains that typically result during thermal cycling of ferroelectric materials and which leads to patterning defects and degraded performance. In accordance with the invention, a ferroelectric wafer is provided with a conductive layer on the top and bottom surfaces of the wafer. A sufficient bias voltage is applied across the conductive layers to polarize the wafer into a single direction. At least one of the conductive layers is selectively patterned to form a conductive domain template. A sufficient revise bias voltage is then applied to the conductive domain template and a remaining conductive layer to produce the domain patterned structure. According to a preferred embodiment of the invention, the ferroelectric wafer is formed of LiNbO or LiTaO .

Method for domain patterning in low coercive field ferroelectrics

Adjusting lithium oxide concentration in wafers using a two-phase lithium-rich source

A method for fabricating periodically poled structures. The method produces an electric field within a ferroelectric substrate by applying a voltage waveform to an electrode structure disposed on a surface of the substrate. The waveform raises the electric field magnitude to a level substantially greater than that required to reverse domains within the substrate. The waveform then lowers the voltage such that the electric field has a value at which a domain wall velocity is most sensitive to changes in the field. The waveform maintains the electric field value until a current through the substrate drops substantially. The electric field is then lowered to a value below a level required to sustain domain wall motion, but greater than a level below which backswitching occurs. The electric field is then lowered to zero in such a way as to prevent backswitching. Alternatively, the electric field is maintained for a time t determined by t&equals;x/v, where x is a domain wall half-width and v is a domain wall velocity. Subsequently, the waveforms lower the voltage to zero.

Method for fabricating efficient sources of electromagnetic radiation

A method for fabricating periodically poled structures. The method produces an electric field within a ferroelectric substrate by applying a voltage waveform to an electrode structure disposed on a surface of the substrate. The waveform raises the electric field magnitude to a level substantially greater than that required to reverse domains within the substrate. Domain reversal continues through to completion at which time the poling field is turned off or substantially reduced to induce spontaneous backswitch poling. The forward poling field is then reapplied to stop the backswitch poling. The ability to selectively enable and terminate backswitching allows for the formation of domain patterns with small feature sizes and high uniformity through large volumes of material.

Backswitch poling method for domain patterning of ferroelectric materials

Growing community of inventors

Foster City, CA, United States of America

Gregory David Miller