Rosemount Inc.

Honeywell International Inc.

Rosemont Inc.

Other

Gregory C Brown

Curtis H Rahn

Richard Louis Nelson

Gary A Lenz

Jogesh Warrior

Thomas A Larson

Mark Stephen Schumacher

Robert J Karschnia

Brian Lee Westfield

Marcos Peluso

George Charles Hausler

Mark Fandrey

Bennett L Louwagie

Stephen D Anderson

Philip Ostby

Todd A Piechowski

David Andrew Broden

Roger L Frick

James A Johnson

Scott Nelson

Gerald R Cucci

Eric R Lovegren

Randy J Longsdorf

Dale Scott Davis

Andrew Juri Klosinski

James L Gravel

William Thomas Anderson

Steven Richard Trimble

Gabriel Lazaro Sierra

Thomas J Rolfer

Brian E Richter

Peter J Dukich

Scott D Nelson

Amy K Johnson

John H Nash

Scott Eliason

Mark C Fandrey

Philip G Ostby

Andrew J Klosinski

Dale S Davis

Curtis Rahn

A pressure sensor die assembly for a differential pressure sensor comprises a base substrate including a first overpressure stop structure on a first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section that includes a first cavity and a second cavity surrounding the first cavity, and a second side opposite from the first side. A pressure sensing diaphragm portion is defined by the first cavity and is located over the first overpressure stop structure. An overpressure diaphragm portion is defined by the second cavity. A top cap coupled to the second side of the diaphragm structure includes a second overpressure stop structure. The overpressure stop structures are each sized to support substantially all of a strained area of the pressure sensing diaphragm portion at an increasing overpressure on the first or second sides of the diaphragm structure.

Differential pressure sensor full overpressure protection device

In one embodiment a pressure sensor is provided. The pressure sensor includes a housing having an input port configured to allow a media to enter the housing. A support is mounted within the housing, the support defining a first aperture extending therethrough. A stress isolation member is mounted within the first aperture of the support, the stress isolation member defining a second aperture extending therethrough, wherein the stress isolation member is composed of silicon. sensor die bonded to the stress isolation member. The sensor die includes a silicon substrate having an insulator layer on a first side of the silicon substrate; and sensing circuitry disposed in the insulator layer on the first side, wherein a second side of the silicon substrate is exposed to the second aperture of the stress isolation member and the second side is reverse of the first side.

Integrated SOI pressure sensor having silicon stress isolation member

A pressure sensor die assembly comprises a base substrate having a first surface, a stop structure on the first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section including a first cavity and a second cavity surrounding the first cavity; a pressure sensing diaphragm portion having a first thickness and defined by the first cavity; and an over pressure diaphragm portion having a second thickness and defined by the second cavity, the second thickness greater than the first thickness. When an over pressure is applied, at least some area of the pressure sensing diaphragm portion is deflected and supported by the stop structure. As over pressure is increased, the over pressure diaphragm portion deflects and engages with the first surface such that additional area of the pressure sensing diaphragm portion is deflected and supported by the stop structure.

Pressure sensor die over pressure protection for high over pressure to operating span ratios

A silicon-on-sapphire chip with minimal thermal strain preload is provided. The chip includes a sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface; and a silicon layer overlaying the first-sapphire surface. The silicon layer is formed by: creating a plurality of buried cavities in a plane within tens of microns from a first-silicon surface of a silicon wafer; laser fusing the first-silicon surface to the first-sapphire surface at room temperature to attach the silicon wafer to a sapphire wafer; and cleaving the silicon wafer along the plane including the plurality of buried cavities. A silicon-wafer layer is formed from the silicon material between the first-silicon surface and the plane of the plurality of buried cavities. The silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer. The silicon-on-sapphire chip is formed by dicing the silicon-on-sapphire wafer.

Silicon-on-sapphire device with minimal thermal strain preload and enhanced stability at high temperature

Systems and method for mounting the printed wiring assembly to the header assembly of a pressure sensor are provided. In at least one embodiment, the pressure sensor comprises: a header assembly; a printed wiring assembly having a pressure sensor mounted thereon; and, at least one substantially cylindrical member that mechanically couples the printed wiring assembly to the header assembly. The substantially cylindrical member has a substantially hollow core, a substantially circular first end attached to the header assembly, a substantially circular second end opposite the substantially circular first end, and at least one side extending from the substantially circular first end to the substantially circular second end of the cylindrical member. Furthermore, the substantially circular second end or the at least one side or both are attached to the printed wiring assembly.

Systems and methods for mounting the printed wiring assembly to the header assembly of a pressure sensor

An integrated reference vacuum pressure sensor with an atomic layer deposition (ALD) coated input port comprises a housing with an port for a media to enter the housing; a substrate and stress isolation member in the housing; wherein a channel extends through the substrate and the stress isolation member, wherein a trace is embedded within the stress isolation member, wherein stress isolation member and substrate surfaces exposed to the channel are coated with an ALD; a sensor die bonded to the stress isolation member, the sensor die comprising a diaphragm having circuitry, wherein a side of the diaphragm is exposed to the channel and the circuitry is mounted to another side of the diaphragm; a via extending through the sensing die electrically connecting the circuitry to the trace; and a cover bonded to the stress isolation member, the cover having a recess, the sensor die in the recess.

Integrated reference vacuum pressure sensor with atomic layer deposition coated input port

Systems and methods for a pressure sensor are provided, where the pressure sensor comprises a housing having a high side input port that allows a high pressure media to enter a high side of the housing and a low side input port that allows a low pressure media to enter a low side of the housing when the housing is placed in an environment containing the high and low pressure media; a substrate mounted within the housing; a stress isolation member mounted to the substrate; a die stack having sensing circuitry bonded to the stress isolation member; a low side atomic layer deposition (ALD) applied to surfaces, of the substrate, the stress isolation member, and the die stack, exposed to the low side input port; and a high side ALD applied to surfaces, of the stress isolation member and the die stack, exposed to the high side input port.

Systems and methods for a pressure sensor having a two layer die structure

Systems and methods are provided for a deep sea pH sensor. In one embodiment, a method for manufacturing a pH sensor comprises forming a sensor electrode in a working surface of a die wherein the sensor electrode is able to sense the pH of a liquid and forming at least one isolation groove around the sensor electrode on the working surface of the die, wherein the die has a wide street around the sensor electrode and the at least one isolation groove. The method further comprises mounting the die onto a base and securing a seal on the working surface in the wide street, wherein the seal surrounds the isolation groove, the seal sealing the liquid within the portion of the working surface of the die containing the sensor electrode and the isolation groove, when the pH sensor is subjected to high pressure.

Deep sea pH sensor

System and methods for silicon on insulator MEMS pressure sensors are provided. In one embodiment, a method comprises: applying a doping source to a silicon-on-insulator (SOI) silicon wafer having a sensor layer and an insulating layer comprising SiOmaterial; doping the silicon wafer with Boron atoms from the doping source while controlling an injection energy of the doping to achieve a top-heavy ion penetration profile; and applying a heat source to diffuse the Boron atoms throughout the sensor layer of the SOI silicon wafer.

Apparatus and processes for silicon on insulator MEMS pressure sensors

A pH sensor is provided. The pH sensor comprises a substrate and an ion sensitive field effect transistor (ISFET) die comprising an ion sensing part that responds to pH, wherein the ISFET die is located over the substrate. The pH sensor also comprises a protective layer formed over at least a portion of an outer surface of the ISFET die and at least a portion of the substrate. Further, the pH sensor comprises a cover member mechanically coupled to the protective layer, wherein the cover member houses the ISFET die and the substrate, and wherein the cover member defines an opening proximate to the ion sensing part.

Electronic pH sensor die packaging

A wireless power and communication unit for field devices is configured to connect to a field device and provide operating power and wired digital communication between the unit and the field device. RF circuitry in the unit is configured for radio frequency communication. In one embodiment, power supply circuitry in the unit includes one or more solar power cells that convert solar energy into electricity to power both the unit and the field device. The unit interacts with the field device in accordance with a standard industry communication protocol. The unit communicates wirelessly with an external device, such as a control room, based upon the interaction with the field device.

Wireless power and communication unit for process field devices

A system for predicting fouling and corrosion of a combustion system in an industrial process includes a pipe, a restrictive element, and a fouling and corrosion detector. The pipe contains a fuel. The restrictive element is coupled to the pipe and the fuel passes through the restrictive element. The fouling and corrosion detector is coupled to the pipe and is adapted to detect a characteristic signature of the restrictive element and to generate an alarm if a change in the detected signature exceeds a predetermined limit relative to a baseline signature.

Fouling and corrosion detector for burner tips in fired equipment

A process device includes a controller and a wireless communications module. The wireless communications module is coupled to the controller. A power generation module is provided to generate electricity for the process device. The power generator module can be disposed within the process device or it can be a separate unit coupled to the process device.

Power generation for process devices

A pressure sensor device for a modular pressure sensor package is provided, comprising a substrate having a pressure port that extends through the substrate from a first side of the substrate to a second side of the substrate. A pressure sensor die is attached to the first side of the substrate, forming a seal over the pressure port on the first side of the substrate. A cover is attached to the first side of the substrate over the pressure sensor die, forming a sealed cavity wherein the pressure sensor die is located within the cavity. The device also comprises a plurality of electrical connectors mounted to the substrate external to the cavity, the plurality of electrical connectors electrically coupled to the pressure sensor die. Further, the substrate includes at least one mounting element configured to secure a pressure port interface to the second side of the substrate in a position around the pressure port.

Modular pressure sensor

Growing community of inventors

Chanhassen, MN, United States of America

Gregory C Brown