Globalfoundries Inc.

Gregory Bazan

Thomas F Houghton

The present invention relates generally to semiconductor devices and more particularly, to a structure and method of creating a non-permeable edge seal around a whole wafer. The edge seal may be located between an inner region of a wafer comprising product chips and an outer edge of the wafer. The edge seal may comprise a fillet region adjacent the inner region, and a dielectric extension adjacent the fillet region. The dielectric extension region may be impermeable to moisture and composed of a dielectric layer on the wafer and a capping layer on the dielectric layer. The fillet region may comprise a lower metal fillet directly on the wafer, a dielectric layer on the lower metal fillet, an upper metal fillet on the dielectric layer, and a capping layer on the upper metal fillet. The fillet region may be adjacent to and in contact with a permeable layer formed on the product region.

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Essex Junction, VT, United States of America

Gregory Bazan