Lockheed Martin Corporation

Northrop Grumman Systems Corporation

Lockhead Martin Corp.

Gregory Alan Arlow

John A Ostop

Paul G Kennedy

Robin E Hamilton

Thomas J Fagan, Jr

Martin L Baker

John C Golombeck

Alfred W Morse

Michael Uscinowicz

Fred Tanjutco

William M Heruska

An open architecture design for a digital nearfield test system for nearfield testing of a phased array antenna allows the ability to use the components of an individual phased array antenna to be tested in conjunction with a nearfield scanner probe system allowing an efficient and cost-saving 'radar testing the radar' scenario.

Nearfield testing architecture

A power solid-state device is pulsed from a controlled pulse source, which generates heat in the chip. Similar or identical pulses are applied to a software or equivalent electrical hardware temperature simulator, for predicting the chip temperature. The output of the simulator is monitored, and the controlled pulse source is inhibited in the event that the predicted chip temperature exceeds a limit. A delay may be introduced between the pulse generation and application to the chip. Additional temperatures associated with the chip heat sink may be combined with the chip temperature.

Pulsed thermal monitor

A current source modulator () provides power to radar transmitters. The modulator comprises a power supply () providing, when enabled, a known current to a storage capacitor (). A comparator circuit () provides a signal (V) when voltage (V) across the storage capacitor () falls a reference voltage, and an enable circuit () responds to the comparator signal (V) and an ON command signal to enable the power supply (). The modulator () further includes a network (N) associated with the comparator circuit () to retain the value of the signal (provide hysteresis) when the voltage across the storage capacitor is above the reference voltage. The modulator () may include a second network (N) associated with a second comparator circuit, operable to retain a second signal when capacitor () voltage Vis above a reference voltage. In this aspect, there is a rapid charge and a trickle charge that reduces any charging overshoot.

Current source modulator

A source modulator circuit for an amplifier including a silicon carbide (SiC) static induction transistor (SIT) having a grounded gate, a source and a drain, includes: a source bias voltage supply connected to the source of the transistor; a drain voltage supply connected between the source and drain of the transistor; and a shunt circuit for directing current from the drain voltage supply around the source voltage supply to said source; whereby power dissipation by the source voltage supply is minimized. The shunt circuit includes a field effect transistor (FET) switch responsive to a control signal from a gated feedback operational amplifier for turning on the quiescent current of the SIT and setting the voltage applied to the source to a desired source voltage level.

Floating source modulator for silicon carbide transistor amplifiers

Cooling of densely packaged semiconductor devices is achieved by microchannels which extract heat by forced convection and the use of fluid coolant located as close as possible to the heat source. The microchannels maximize heat sink surface area and provides improved heat transfer coefficients, thereby allowing a higher power density of semiconductor devices without increasing junction temperature or decreasing reliability. In its preferred embodiment, a plurality of microchannels are formed directly in the substrate portion of a silicon or silicon carbide chip or die mounted on a ground plane element of a circuit board and where a liquid coolant is fed to and from the microchannels through the ground plane. The microchannels comprise a plurality of closed-ended slots or grooves of generally rectangular cross section. Fabrication methods include deposition and etching, lift-off processing, micromachining and laser cutting techniques.

Method of extracting heat from a semiconductor body and forming

Microchannel cooling of high power semiconductor devices

Growing community of inventors

Southampton, NJ, United States of America

Gregory Alan Arlow