Sandia Corporation

The United States of America As Represented by the United States

National Technology & Engineering Solutions of Sandia, LLC

Lockheed Martin Corporation

Gregory A Vawter

Stanley H Kravitz

Erik J Skogen

Vincent Mark Hietala

Chris P Tigges

Anna Tauke-Pedretti

Albert C Marshall

David R Myers

Thomas M Brennan

Burrell E Hammons

Robert Edward Smith

David Samuel Ginley

Andrew A Allerman

Thomas E Zipperian

Kevin R Zavadil

Michael Gehl

Jon S Martens

Gert K Hohenwarter

Weng W Chow

Donald B King

Thomas A Plut

Walter J Zubrzycki

Galen Hoffman

Rick C Jones

Jeff B Lilley

Charles Alford

Anna M Tauke Pedretti

Junoh Choi

Monochromatic photosensitive devices (MPDs) having series connected photosensitive diode cell arrays in two configurations are disclosed. The MPDs employ a protection diode to bypass either one or multiple photosensitive diodes in each photosensitive diode cell should a photosensitive diode fail as an open circuit or become blocked from the monochromatic light. The protection diode is vertically (epitaxial growth direction) integrated with a photosensitive diode layer structure during epitaxial growth, thereby permitting monolithic fabrication of the one or multiple photosensitive diode cells. The bulk of the one or multiple photosensitive diodes are formed of a material having a bandgap corresponding to the wavelength of the monochromatic light, while the protection diodes are formed of a material having a bandgap greater than the wavelength of the monochromatic light. The monochromatic light passes through the protection diode before being absorbed by the one or multiple photosensitive diodes.

Epitaxially integrated protection diodes for monochromatic photosensitive diodes

A hybrid-integrated series/parallel-connected photovoltaic diode array employs 10s-to-100s of single-wavelength III-V compound semiconductor photodiodes in an array bonded onto a transparent optical plate through which the array is illuminated by monochromatic light. The power-by-light system receiver enables high-voltage, up to 1000s of volts, optical transmission of power to remote electrical systems in harsh environments.

Photovoltaic array for a power-by-light system

In an optical apparatus, an introduced semiconductor device is heterointegrated on a silicon-based platform containing a silicon-based waveguide. A polymeric waveguide is optically coupled to the introduced semiconductor device and overlies at least a portion of the silicon-based waveguide. The polymeric waveguide is conformed as a multimode interference (MMI) coupler between the introduced semiconductor device and the silicon-based waveguide. At least the polymeric waveguide, and in embodiments, also the silicon-based waveguide, is tapered with a shape that effectuates optical coupling to the silicon-based waveguide.

Optical coupler for heterogeneous integration

The present invention relates to optical vias to optically connect multilevel optical circuits. In one example, the optical via includes a surface plasmon polariton waveguide, and a first optical waveguide formed on a first substrate is coupled to a second optical waveguide formed on a second substrate by the surface plasmon polariton waveguide. In some embodiments, the first optical waveguide includes a transition region configured to convert light from an optical mode to a surface plasmon polariton mode or from a surface plasmon polariton mode to an optical mode.

Plasmon-assisted optical vias for photonic ASICS

An integrated or monolithic photonic circuit that modulates RF signals onto optical signals and then performs a channelizing filter function according to the RF content. According to an exemplary embodiment, the photonic circuit is employed in an aircraft system that includes a front end, a photonic circuit, an optical connection, and an electronic module at some distant location in the aircraft. RF signals are received by an antenna in the front end, the RF signals are then modulated onto optical signals by a modulator and a laser, the modulated optical signals are filtered by a filter array according to a channelizing filter function, and the modulated and channelized optical signals are then carried over the optical connection to the electronic module. Other options like a wavelength-tunable laser and corresponding feedback feature, as well as ring filters with integrated semiconductor optical amplifiers (SOAs) are also possible.

Photonic circuit

An optical sampler includes a first and second 1&#xd7;n optical beam splitters splitting an input optical sampling signal and an optical analog input signal into n parallel channels, respectively, a plurality of optical delay elements providing n parallel delayed input optical sampling signals, n photodiodes converting the n parallel optical analog input signals into n respective electrical output signals, and n optical modulators modulating the input optical sampling signal or the optical analog input signal by the respective electrical output signals, and providing n successive optical samples of the optical analog input signal. A plurality of output photodiodes and eADCs convert the n successive optical samples to n successive digital samples. The optical modulator may be a photodiode interconnected Mach-Zehnder Modulator. A method of sampling the optical analog input signal is disclosed.

Parallel optical sampler

Methods and apparatus for optical analog to digital conversion are disclosed. An optical signal is converted by mapping the optical analog signal onto a wavelength modulated optical beam, passing the mapped beam through interferometers to generate analog bit representation signals, and converting the analog bit representation signals into an optical digital signal. A photodiode receives an optical analog signal, a wavelength modulated laser coupled to the photodiode maps the optical analog signal to a wavelength modulated optical beam, interferometers produce an analog bit representation signal from the mapped wavelength modulated optical beam, and sample and threshold circuits corresponding to the interferometers produce a digital bit signal from the analog bit representation signal.

Optical domain analog to digital conversion methods and apparatus

Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.

Mutually injection locked lasers for enhanced frequency response

A self-powered microthermionic converter having an internal thermal power source integrated into the microthermionic converter. These converters can have high energy-conversion efficiencies over a range of operating temperatures. Microengineering techniques are used to manufacture the converter. The utilization of an internal thermal power source increases potential for mobility and incorporation into small devices. High energy efficiency is obtained by utilization of micron-scale interelectrode gap spacing. Alpha-particle emitting radioisotopes can be used for the internal thermal power source, such as curium and polonium isotopes.

Self-powered microthermionic converter

Methods for fabricating a highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (<0.1 micron), to minimize the tip's contact area. A heat source can be placed directly on the microspikes. The micro heat barrier can have an apparent thermal conductivity in the range of 10 to 10 W/m-K. Multiple layers of reflective membranes can be used to increase thermal resistance.

Methods for fabricating a micro heat barrier

A highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (<0.1 micron), to minimize the tip's contact area. A heat source can be placed directly on the microspikes. The micro heat barrier can have an apparent thermal conductivity in the range of 10 to 10 W/m-K. Multiple layers of reflective membranes can be used to increase thermal resistance.

Micro heat barrier

A new class of fabrication methods for embedded distributed grating structures is claimed, together with optical devices which include such structures. These new methods are the only known approach to making defect-free high-dielectric contrast grating structures, which are smaller and more efficient than are conventional grating structures.

Embedded high-contrast distributed grating structures

A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

Tapered rib fiber coupler for semiconductor optical devices

A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides.

Cutoff-mesa isolated rib optical waveguide for III-V heterostructure

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

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Corrales, NM, United States of America

Gregory A Vawter